Diodes ZXTD6717E6 - Manual (Page 4)

ISSUE 2 - JULY 2001
ZXTD6717E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
-12 V I
C
=-100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
-12 V I
C
=-10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 V I
E
=-100 ␮A
Collector Cut-Off Current I
CBO
-10 nA V
CB
=-10V
Emitter Cut-Off Current I
EBO
-10 nA V
EB
=-4V
Collector Emitter Cut-Off Current I
CES
-10 nA V
CES
=-10V
Collector-Emitter Saturation
Voltage V
CE(sat)
-25
-55
-110
-160
-185
-40
-100
-175
-215
-240
mV
mV
mV
mV
mV I
C
=-100mA, I
B
=-10mA*
I
C
=-250mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.25A, I
B
=-100mA*
Base-Emitter Saturation Voltage V
BE(sat)
-0.99 -1.10 V I
C
=-1.25A, I
B
=-100mA*
Base-Emitter Turn-On Voltage V
BE(on)
-0.85 -1.0 V I
C
=-1.25A, V
CE
=-2V*
Static Forward Current Transfer
Ratio h
FE
300
300
200
125
75
30
490
450
340
250
140
80
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1.25A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
Transition Frequency f
T
220 MHz I
C
=-50mA, V
CE
=-10V
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=-10V, f=1MHz
Turn-On Time
Turn-Off Time t
(on)
t
(off)
50
135
ns
ns I
C
=-1A, V
CC
=-10V
I
B1
=I
B2
=-100mA
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
4