Diodes ZXTD6717E6 - Manual (Page 3)

ISSUE 2 - JULY 2001
ZXTD6717E6
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage V
(BR)CBO
15 V I
C
=100 ␮A
Collector-Emitter Breakdown
Voltage V
(BR)CEO
15 V I
C
=10mA*
Emitter-Base Breakdown Voltage V
(BR)EBO
5 V I
E
=100 ␮A
Collector Cut-Off Current I
CBO
10 nA V
CB
=10V
Emitter Cut-Off Current I
EBO
10 nA V
EB
=4V
Collector Emitter Cut-Off Current I
CES
10 nA V
CES
=10V
Collector-Emitter Saturation
Voltage V
CE(sat)
16.5
40
75
150
205
20
55
100
200
245
mV
mV
mV
mV
mV I
C
=100mA, I
B
=10mA*
I
C
=250mA, I
B
=10mA*
I
C
=500mA, I
B
=10mA*
I
C
=1A, I
B
=10mA*
I
C
=1.5A, I
B
=20mA*
Base-Emitter Saturation Voltage V
BE(sat)
0.93 1.1 V I
C
=1.5A, I
B
=20mA*
Base-Emitter Turn-On Voltage V
BE(on)
0.865 1.1 V I
C
=1.5A, V
CE
=2V*
Static Forward Current Transfer
Ratio h
FE
200
300
250
200
75
30
420
450
390
300
150
75
I
C
=10mA, V
CE
=2V*
I
C
=100mA, V
CE
=2V*
I
C
=500mA, V
CE
=2V*
I
C
=1A, V
CE
=2V*
I
C
=3A, V
CE
=2V*
I
C
=5A, V
CE
=2V*
Transition Frequency f
T
180 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 pF V
CB
=10V, f=1MHz
Turn-On Time
Turn-Off Time t
(on)
t
(off)
50
250
ns
ns I
C
=1A, V
CC
=10V
I
B1
=I
B2
=100mA
*Measured under pulsed conditions. Pulse width=300 µ s. Duty cycle ≤ 2%
3