Diodes ZXTD6717E6 - Manual (Page 2)

ISSUE 2 - JULY 2001
ZXTD6717E6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R θ JA
125 °C/W
Junction to Ambient (b) R θ JA
45 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р5 secs.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT NPN LIMIT PNP UNIT
Collector-Base Voltage V
CBO
15 -12 V
Collector-Emitter Voltage V
CEO
15 -12 V
Emitter-Base Voltage V
EBO
5 -5 V
Peak Pulse Current I
CM
5 -3 A
Continuous Collector Current I
C
1.5 -1.25 A
Base Current I
B
200 -200 mA
Power Dissipation at TA=25°C (a)
Linear Derating Factor
P
D
1.1
8.8 1.1
8.8 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
P
D
1.7
13.6
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 -55 to +150 °C