Diodes ZXTD6717E6 - Manual

ZXTD6717E6
ISSUE 2 - JULY 2001
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS
SUMMARY
NPN: V
CEO
=15V; V
CE(sat)
=0.1V; I
C
= 1.5A;
PNP: V
CEO
=-12V; V
CE(sat)
=-0.175V; I
C
= -1.25A;
DESCRIPTION
This new combination device comprises a complementary NPN and PNP low
saturation transistor housed in the SOT23-6 package. Users benefit from very
efficient performance combining a high current operation, exceptionally low
V
CE(sat)
and high H
FE
resulting in extremely low on state losses. This dual transistor
is ideal for use in a variety of efficient driving functions including motors, lamps,
relays and solenoids and will also benefit circuits requiring high output current switching.
FEATURES
•
Low Saturation Voltage
•
R
CE(sat)
values NPN =135m
Ω
at 1.5A
- PNP =150m Ω at 1.25A
•
h
FE
min 200 at 1A
• I
C
=1.5A Continuous (NPN), 1.25A (PNP)
•
SOT23-6 package with P
D
= 1.1W
APPLICATIONS
•
Various driving functions
Lamps
Motors
Relays and solenoids
• High output current switches
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH
(mm) QUANTITY
PER REEL
ZXTD6717E6TA 7 8mm embossed 3000 units
ZXTD6717E6TC 13 8mm embossed 10000 units
DEVICE MARKING
6717
Top View
1
SOT23-6
C1
E1
B1
C2
E2
B2