Electrical characteristics – q2 (pnp transistor) – Diodes ZXTC2062E6 User Manual
Page 5
ZXTC2062E6
Document Number: DS33647 Rev: 2 - 2
5 of 9
February 2013
© Diodes Incorporated
ZXTC2062E6
ADVAN
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O
RM
ATI
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N
A Product Line of
Diodes Incorporated
Electrical Characteristics – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
-25 -55
⎯
V
I
C
= -100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 12)
BV
CEO
-20 -45
⎯
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-7 -8.3
⎯
V
I
E
= -100
μA, I
C
= 0
Collector Cutoff Current
I
CBO
⎯
⎯
< -1
-50
-0.5
nA
μA
V
CB
= -25V
V
CB
= -25V, T
A
= +100°C
Collector Cutoff Current
I
EBO
⎯
< -1
-50
nA
V
EB
= -5.6V
ON CHARACTERISTICS (Note 12)
DC Current Gain
h
FE
300
170
65
⎯
450
300
100
15
900
⎯
⎯
⎯
⎯
I
C
= -10mA, V
CE
= -2V
I
C
= -1.0A, V
CE
= -2V
I
C
= -3.5A, V
CE
= -2V
I
C
= -10A, V
CE
= -2V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
⎯
⎯
-55
-100
-185
-190
-65
-135
-280
-250
mV
I
C
= -1.0A, I
B
= -100mA
I
C
= -1.0A, I
B
= -20mA
I
C
= -2.0A, I
B
= -40mA
I
C
= -3.5A, I
B
= -175mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
-925
-1000 mV
I
C
= -3.5A, I
B
= -175mA
Base-Emitter Turn-On Voltage
V
BE(on)
⎯
-835 -900 mV I
C
= -3.5A, V
CE
= -2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
21 30 pF
V
CB
= -10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
290
⎯
MHz V
CE
= -10V, I
C
= -50mA, f = 100MHz
Delay Time
t
d
⎯
56
⎯
ns
V
CC
= -10V, I
C
= -1A,
I
B1
= -I
B2
= -10mA
Rise Time
t
r
⎯
68
⎯
ns
Storage Time
t
s
⎯
158
⎯
ns
Fall Time
t
f
⎯
59
⎯
ns
Notes:
12. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.