Electrical characteristics – q1 (npn transistor) – Diodes ZXTC2062E6 User Manual
Page 4
ZXTC2062E6
Document Number: DS33647 Rev: 2 - 2
4 of 9
February 2013
© Diodes Incorporated
ZXTC2062E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
BV
CBO
100 140
⎯
V
I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage (Note 12)
BV
CEO
20 35
⎯
V
I
C
= 10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
7 8.3
⎯
V
I
E
= 100
μA, I
C
= 0
Emitter-Collector breakdown voltage (base open)
BV
ECO
5 6
⎯
V
I
E
= 100
μA
Collector Cutoff Current
I
CBO
⎯
<1
50
0.5
nA
μA
V
CB
= 100V
V
CB
= 100V, T
A
= +100°C
Collector Cutoff Current
I
EBO
⎯
<1 50 nA
V
EB
= 5.6V
ON CHARACTERISTICS (Note 12)
DC Current Gain
h
FE
300
280
140
⎯
450
420
210
15
900
⎯
⎯
⎯
⎯
I
C
= 10mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 4A, V
CE
= 2V
I
C
= 15A, V
CE
= 2V
Collector-Emitter Saturation Voltage
V
CE(sat)
⎯
40
60
95
140
50
75
115
190
mV
I
C
= 1.0A, I
B
= 100mA
I
C
= 1.0A, I
B
= 20mA
I
C
= 2.0A, I
B
= 40mA
I
C
= 4A, I
B
= 200mA
Base-Emitter Saturation Voltage
V
BE(sat)
⎯
940
1050 mV
I
C
= 4A, I
B
= 200mA
Base-Emitter Turn-On Voltage
V
BE(on)
⎯
810 900 mV I
C
= 4A, V
CE
= 2V
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
C
obo
⎯
17 25 pF
V
CB
= 10V, f = 1.0MHz
Current Gain-Bandwidth Product
f
T
⎯
215
⎯
MHz V
CE
= 10V, I
C
= 50mA, f = 100MHz
Delay Time
t
d
⎯
68
⎯
ns
V
CC
= 10V, I
C
= 1A, I
B1
= -I
B2
= 10mA
Rise Time
t
r
⎯
72
⎯
ns
Storage Time
t
s
⎯
361
⎯
ns
Fall Time
t
f
⎯
64
⎯
ns
Notes:
12. Measured under pulsed conditions. Pulse width
≤ 300μs. Duty cycle ≤ 2%.