Maximum ratings – q1 (npn transistor), Maximum ratings – q2 (pnp transistor), Thermal characteristics – Diodes ZXTC2062E6 User Manual
Page 2
ZXTC2062E6
Document Number: DS33647 Rev: 2 - 2
2 of 9
February 2013
© Diodes Incorporated
ZXTC2062E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Maximum Ratings – Q1 (NPN Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
100 V
Collector-Emitter Voltage
V
CEO
20 V
Emitter-Collector Voltage (reverse blocking)
V
ECO
5 V
Emitter-Base Voltage
V
EBO
7 V
Continuous Collector Current
I
C
4 A
Peak Pulsed Collector Current
I
CM
10 A
Base Current
I
B
1 A
Maximum Ratings – Q2 (PNP Transistor)
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Collector-Base Voltage
V
CBO
-25 V
Collector-Emitter Voltage
V
CEO
-20 V
Emitter-Collector Voltage (reverse blocking)
V
ECO
-4 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-3.5 A
Peak Pulsed Collector Current
I
CM
-10 A
Base Current
I
B
-1 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Value
Unit
Power Dissipation
Linear Derating Factor
(Notes 5 & 9)
P
D
0.7
5.6
W
mW/
°C
(Notes 6 & 9)
0.9
7.2
(Notes 6 & 10)
1.1
8.8
(Notes 7 & 9)
1.1
8.8
(Notes 8 & 9)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Notes 5 & 9)
R
θJA
179
°C/W
(Notes 6 & 9)
139
(Notes 6 & 10)
113
(Notes 7 & 9)
113
(Notes 8 & 9)
73
Thermal Resistance, Junction to Lead
(Note 11)
R
θJL
87.58
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes:
5. For a device surface mounted on 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
6. Same as note (5), except the device is surface mounted on 25mm x 25mm 1oz copper.
7. Same as note (5), except the device is surface mounted on 50mm x 50mm 2oz copper.
8. Same as note (7), except the device is measured at t < 5 seconds.
9. For device with one active die, both collectors attached to a common heatsink.
10. For device with two active dice running at equal power, split heatsink 50% to each collector.
11. Thermal resistance from junction to solder-point (at the end of the collector lead).