Electrical characteristics (continued) – Rainbow Electronics ATA6664 User Manual
Page 13

13
9146E–AUTO–03/11
Atmel ATA6663/ATA6664
7.12
Leakage current at loss of
battery; node has to substain the
current that can flow under this
condition; bus must remain
operational under this condition
V
BAT
disconnected
V
SUP_Device
= GND
0V < V
BUS
< 18V
6
I
BUS_NO_Bat
0.1
2
µA
A
7.13
Capacitance on pin LIN to GND
6
C
LIN
20
pF
D
8
LIN Bus Receiver
8.1
Center of receiver threshold
V
BUS_CNT
=
(V
th_dom
+ V
th_rec
) / 2
6
V
BUS_CNT
0.475
×
V
S
0.5
×
V
S
0.525
×
V
S
V
A
8.2
Receiver dominant state
V
EN
= 5V
6
V
BUSdom
–27
0.4
×
V
S
V
A
8.3
Receiver recessive state
V
EN
= 5V
6
V
BUSrec
0.6
×
V
S
40
V
A
8.4
Receiver input hysteresis
V
HYS
= V
th_rec
– V
th_dom
6
V
BUShys
0.028
×
V
S
0.1
×
V
S
0.175
×
V
S
V
A
8.5
Pre-wake detection LIN
High-level input voltage
6
V
LINH
V
S
–
2V
V
S
+
0.3V
V
A
8.6
Pre-wake detection LIN
Low-level input voltage
Switches the LIN receiver on
6
V
LINL
–27V
V
S
–
3.3V
V
A
8.7
LIN Pre-wake pull-up current
V
S
< 27V
V
LIN
= 0V
6
I
LINWAKE
–30
–10
µA
A
9
Internal Timers
9.1
Dominant time for wake-up via
LIN bus
V
LIN
= 0V
6
t
BUS
30
90
150
µs
A
9.2
Time of low pulse for wake-up
via pin WAKE
V
WAKE
= 0V
3
t
WAKE
7
35
50
µs
A
9.3
Time delay for mode change
from fail-safe mode to normal
mode via pin EN
V
EN
= 5V
2
t
norm
2
7
15
µs
A
9.4
Time delay for mode change
from normal mode into sleep
mode via pin EN
V
EN
= 0V
2
t
sleep
7
15
24
µs
A
9.5
Atmel ATA6663:
TXD dominant time out time
V
TXD
= 0V
4
t
dom
40
60
85
ms
A
9.6
Power-up delay between V
S
= 5V
until INH switches to high
V
VS
= 5V
7, 8
t
VS
200
µs
A
9.7
Monitoring time for wake-up via
LIN bus
6
t
mon
6
10
15
ms
A
6.
Electrical Characteristics (Continued)
5V < V
S
< 27V, T
j
= –40°C to +150°C
No.
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter