Rainbow Electronics MAX9217 User Manual
Page 2
MAX9217
27-Bit, 3MHz-to-35MHz
DC-Balanced LVDS Serializer
2
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ABSOLUTE MAXIMUM RATINGS
DC ELECTRICAL CHARACTERISTICS
(V
CC_
= +3.0V to +3.6V, R
L
= 100
Ω ±1%, PWRDWN = high, T
A
= -40°C to +85°C, unless otherwise noted. Typical values are at
V
CC_
= +3.3V, T
A
= +25°C.) (Notes 1, 2)
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
V
CC_
to _GND........................................................-0.5V to +4.0V
Any Ground to Any Ground...................................-0.5V to +0.5V
OUT+, OUT- to LVDS GND ...................................-0.5V to +4.0V
OUT+, OUT- Short Circuit to LVDS GND
or V
CCLVDS
.............................................................Continuous
RGB_IN[17:0], CNTL_IN[8:0], DE_IN,
RNG0, RNG1, MOD0, MOD1, PCLK_IN,
PWRDWN, CMF to GND......................-0.5V to (V
CCIN
+ 0.5V)
Continuous Power Dissipation (T
A
= +70°C)
48-Lead Thin QFN (derate 37mW/°C above +70°C) .2963mW
48-Lead TQFP (derate 20.8mW/°C above +70°C) ....1667mW
ESD Protection
Human Body Model (R
D
= 1.5k
Ω, CS = 100pF)
All Pins to GND.................................................................
±2kV
ISO 10605 (R
D
= 2k
Ω, C
S
= 330pF)
Contact Discharge (OUT+, OUT-) to GND.....................
±10kV
Air Discharge (OUT+, OUT-) to GND.............................
±30kV
Storage Temperature Range .............................-65°C to +150°C
Junction Temperature ......................................................+150°C
Lead Temperature (soldering, 10s) .................................+300°C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SINGLE-ENDED INPUTS (RGB_IN[17:0], CNTL_IN[8:0], DE_IN, PCLK_IN, PWRDWN, RNG_, MOD_)
V
CCIN
= 1.71V to <3V
0.65V
CCIN
V
CCIN
+ 0.3
High-Level Input Voltage
V
IH
2
V
CCIN
+ 0.3
V
V
CCIN
= 1.71V to <3V
-0.3
0.3V
CCIN
Low-Level Input Voltage
V
IL
-0.3
+0.8
V
Input Current
I
IN
V
IN
= -0.3V to (V
CCIN
+ 0.3V),
V
CCIN
= 1.71V to 3.6V,
PWRDWN = high or low
-70
+70
µA
Input Clamp Voltage
V
CL
I
CL
= -18mA
-1.5
V
LVDS OUTPUTS (OUT+, OUT-)
Differential Output Voltage
V
OD
Figure 1
250
335
450
mV
Change in V
OD
Between
Complementary Output States
∆V
OD
Figure 1
20
mV
Common-Mode Voltage
V
OS
Figure 1
1.125
1.29
1.375
V
Change in V
OS
Between
Complementary Output States
∆V
OS
Figure 1
20
mV
Output Short-Circuit Current
I
OS
V
OUT+
or V
OUT-
= 0 or 3.6V
-15
±8
+15
mA
Magnitude of Differential Output
Short-Circuit Current
I
OSD
V
OD
= 0
5.5
15
mA
OUT+ = 0,
OUT- = 3.6V
Output High-Impedance Current
I
OZ
PWRDWN = low
or
V
CC_
= 0
OUT+ = 3.6V,
OUT- = 0
-1
+1
µA