Jfet/mosfet/igbt test circuit – Velleman DCA75 User Manual
Page 42

Atlas DCA Pro User Guide
December 2012 – Rev 1
Page 42
JFET/MOSFET/IGBT Test Circuit
It’s important to note that the gate-source voltage can be driven
negative by making the source voltage drive higher than the gate
voltage drive. When this is done however, there is less voltage
available to be across the drain-source nodes and the load resistor.
Example shown is for an N-Channel JFET. Polarities are reversed for
P-Channel devices.
See also other documents in the category Velleman Accessories for electrical:
- PS1502A (6 pages)
- VMB6PBN (15 pages)
- VTTEST14 (5 pages)
- VMB3PS (10 pages)
- PSSE60 (18 pages)
- VMB8IR (10 pages)
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- VMB1TSW (24 pages)
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- VMB4IRT (16 pages)
- VMB7IN (8 pages)
- VMB1USB (6 pages)
- PSI600B (29 pages)
- VL06LA (4 pages)
- PSSEUSB6A (2 pages)
- PS603 (17 pages)
- VMB1TS (43 pages)
- PSSE23 (4 pages)
- VL1212 (29 pages)
- VL7168 (7 pages)
- PSSE45 (19 pages)
- PS925 (13 pages)
- VMB1BL (12 pages)
- VMB1RS (6 pages)
- PSS1320 (11 pages)
- PSSMV8 (20 pages)
- VMB8PB (16 pages)
- VMB4RF (8 pages)
- VMBRSUSB (8 pages)
- PI300BN (33 pages)
- VMBGPTCx (12 pages)
- PSC1350 (2 pages)
- VTTEST15 (7 pages)
- PSSEUSB4 (2 pages)
- VMB4DC (18 pages)
- VMBGP1x (12 pages)
- PSSMV2 (4 pages)
- VMB8PBU (12 pages)
- PSIC75B (18 pages)
- PS12015 (5 pages)
- VMB4TX (1 page)
- VL6278 (12 pages)
- VMB4PD (35 pages)