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Vishay semiconductors, Phase control thyristors (stud version), 80 a – C&H Technology 82RIA...PbF Series User Manual

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Document Number: 94392

For technical questions within your region, please contact one of the following:

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Revision: 17-Sep-10

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80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

Phase Control Thyristors

(Stud Version), 80 A

Vishay Semiconductors

TRIGGERING

PARAMETER SYMBOL

TEST

CONDITIONS VALUES

UNITS

Maximum peak gate power

P

GM

T

J

= T

J

maximum, t

p

 5 ms

12

W

Maximum average gate power

P

G(AV)

T

J

= T

J

maximum, f = 50 Hz, d% = 50

3

Maximum peak positive gate current

I

GM

T

J

= T

J

maximum, t

p

 5 ms

3

A

Maximum peak positive gate voltage

+ V

GM

20

V

Maximum peak negative gate voltage

- V

GM

10

Maximum DC gate current required to trigger

I

GT

T

J

= - 40 °C

Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied

270

mA

T

J

= 25 °C

120

T

J

= 125 °C

60

Maximum DC gate voltage required to trigger

V

GT

T

J

= - 40 °C

3.5

V

T

J

= 25 °C

2.5

T

J

= 125 °C

1.5

DC gate current not to trigger

I

GD

T

J

= T

J

maximum

Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
V

DRM

anode to cathode applied

6

mA

DC gate voltage not to trigger

V

GD

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL

TEST

CONDITIONS

VALUES

UNITS

Maximum operating junction
temperature range

T

J

- 40 to 125

°C

Maximum storage temperature range

T

Stg

- 40 to 150

Maximum thermal resistance,
junction to case

R

thJC

DC operation

0.30

K/W

Maximum thermal resistance,
case to heatsink

R

thCS

Mounting surface, smooth, flat and greased

0.1

Mounting torque, ± 10 %

Non-lubricated threads

15.5

(137)

N · m

(lbf · in)

Lubricated threads

14

(120)

Approximate weight

130

g

Case style

See dimensions - link at the end of datasheet

TO-209AC (TO-94)