Vishay semiconductors, Phase control thyristors (stud version), 80 a – C&H Technology 82RIA...PbF Series User Manual
Page 4
Document Number: 94392
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Revision: 17-Sep-10
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80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series
Phase Control Thyristors
(Stud Version), 80 A
Vishay Semiconductors
TRIGGERING
PARAMETER SYMBOL
TEST
CONDITIONS VALUES
UNITS
Maximum peak gate power
P
GM
T
J
= T
J
maximum, t
p
5 ms
12
W
Maximum average gate power
P
G(AV)
T
J
= T
J
maximum, f = 50 Hz, d% = 50
3
Maximum peak positive gate current
I
GM
T
J
= T
J
maximum, t
p
5 ms
3
A
Maximum peak positive gate voltage
+ V
GM
20
V
Maximum peak negative gate voltage
- V
GM
10
Maximum DC gate current required to trigger
I
GT
T
J
= - 40 °C
Maximum required gate trigger/
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
270
mA
T
J
= 25 °C
120
T
J
= 125 °C
60
Maximum DC gate voltage required to trigger
V
GT
T
J
= - 40 °C
3.5
V
T
J
= 25 °C
2.5
T
J
= 125 °C
1.5
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
Maximum gate current/voltage not to
trigger is the maximum value which
will not trigger any unit with rated
V
DRM
anode to cathode applied
6
mA
DC gate voltage not to trigger
V
GD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL
TEST
CONDITIONS
VALUES
UNITS
Maximum operating junction
temperature range
T
J
- 40 to 125
°C
Maximum storage temperature range
T
Stg
- 40 to 150
Maximum thermal resistance,
junction to case
R
thJC
DC operation
0.30
K/W
Maximum thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, flat and greased
0.1
Mounting torque, ± 10 %
Non-lubricated threads
15.5
(137)
N · m
(lbf · in)
Lubricated threads
14
(120)
Approximate weight
130
g
Case style
See dimensions - link at the end of datasheet
TO-209AC (TO-94)