C&H Technology 40MT120UHTAPbF - Manual (Page 8)

Document Number: 94507 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Mar-10 7
40MT120UHAPbF, 40MT120UHTAPbF
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
Vishay High Power Products
Fig. 19 - Typical Diode I
rr
vs. dI
F
/dt
V
CC
= 600 V; V
GE
= 15 V; I
CE
= 40 A; T
J
= 125 °C
Fig. 20 - Typical Diode Q
rr
vs. dI
F
/dt
V
CC
= 600 V; V
GE
= 15 V; T
J
= 125 °C
Fig. 21 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
Fig. 22 - Typical Gate Charge vs. V
GE
I
CE
= 5.0 A; L = 600 μH
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0 200 400 600 800 1000
dIF /dt (A/μs)
10
15
20
25
30
35
40
45
50
I rr
(A
)
0 200 400 600 800 1000 1200
dIF /dt (A/μs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Q
rr
(μ
C
)
5.0Ω
30Ω
10 Ω
50Ω
60A
40A
20A
0 20 40 60 80 100
VCE (V)
10
100
1000
10000
C
a
p
a
c
ita
n
c
e
(p
F
)
Cies
Coes
Cres
0 100 200 300 400 500
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
G
E
(V
)
600V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
1E-005
0.0001
0.001
0.01
0.1
1
T
h
e
rm
a
l
R
e
s
p
o
n
s
e
(
Z
th
J
C
)
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.123 1.1977
τ
J
τ J
τ
1
τ 1
τ
2
τ 2 τ 3
τ 3
R
1
R
1 R
2
R
2 R
3
R
3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
1E-005
0.0001
0.001
0.01
0.1
1
T
h
e
rm
a
l
R
e
s
p
o
n
s
e
(
Z
th
J
C
)
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.043 0.001214
0.105 0.044929
0.123 1.1977
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2 τ 3
τ
3
R
1
R
1 R
2
R
2 R
3
R
3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri