Vishay high power products – C&H Technology 40MT120UHTAPbF User Manual
Page 2
Document Number: 94507
For technical questions, contact:
www.vishay.com
Revision: 01-Mar-10
1
"Half Bridge" IGBT MTP (Ultrafast NPT IGBT), 80 A
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• Square RBSOA
• HEXFRED
®
antiparallel diodes with ultrasoft reverse
recovery and low V
F
• Al
2
O
3
DBC
• Optional SMD thermistor (NTC)
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Benchmark efficiency above 20 kHz
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
V
CE(on)
typical at V
GE
= 15 V
3.36 V
I
C
at T
C
= 25 °C
80 A
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
TEST
CONDITIONS
MAX.
UNITS
Collector to emitter breakdown voltage
V
CES
1200
V
Continuous collector current
I
C
T
C
= 25 °C
80
A
T
C
= 104 °C
40
Pulsed collector current
I
CM
160
Clamped inductive load current
I
LM
160
Diode continuous forward current
I
F
T
C
= 105 °C
21
Diode maximum forward current
I
FM
160
Gate to emitter voltage
V
GE
± 20
V
RMS isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
Maximum power dissipation (only IGBT)
P
D
T
C
= 25 °C
463
W
T
C
= 100 °C
185
* Pb containing terminations are not RoHS compliant, exemptions may apply