C&H Technology 40MT120UHTAPbF - Manual (Page 4)

Document Number: 94507 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Mar-10 3
40MT120UHAPbF, 40MT120UHTAPbF
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
Vishay High Power Products
Notes
(1) T
0
, T
1
are thermistor´s temperatures
(2) , temperature in Kelvin
DIODE SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Diode forward voltage drop V
FM
I
C
= 40 A - 2.98 3.38
V
I
C
= 80 A - 3.90 4.41
I
C
= 40 A, T
J
= 125 °C - 3.08 3.39
I
C
= 80 A, T
J
= 125 °C - 4.29 4.72
I
C
= 40 A, T
J
= 150 °C - 3.12 3.42
Reverse recovery energy of the diode E
rec V
GE
= 15 V, R
g
= 5 Ω, L = 200 μH
V
CC
= 600 V, I
C
= 40 A
T
J
= 125 °C
- 574 861 μJ
Diode reverse recovery time t
rr
- 120 180 ns
Peak reverse recovery current I
rr
- 43 65 A
THERMISTOR SPECIFICATIONS (40MT120UHTAPbF only)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R
0
(1) T
0
= 25 °C - 30 - k Ω
Sensitivity index of the
thermistor material
β (1)(2)
T
0
= 25 °C
T
1
= 85 °C
- 4000 - K
R
0
R
1
------- β 1
T
0
------
1
T
1
------ – ⎝ ⎠
⎛ ⎞
exp =
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Operating junction temperature range T
J
- 40 - 150
°C
Storage temperature range T
Stg
- 40 - 125
Junction to case
IGBT
R
thJC
- - 0.29
°C/W Diode - - 0.61
Case to sink per module R
thCS
Heatsink compound thermal conductivity = 1 W/mK - 0.06 -
Clearance (1) External shortest distance in air between 2 terminals 5.5 - -
mm
Creepage (2)
Shortest distance along external surface of the
insulating material between 2 terminals
8 - -
Mounting torque to heatsink
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 % Nm
Weight 66 g