Vishay high power products, Half bridge" igbt mtp (ultrafast npt igbt), 80 a – C&H Technology 40MT120UHTAPbF User Manual
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Document Number: 94507
6
Revision: 01-Mar-10
40MT120UHAPbF, 40MT120UHTAPbF
Vishay High Power Products
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
Fig. 13 - Typical Energy Loss vs. I
C
T
J
= 125 °C; L = 250 μH; V
CE
= 400 V
R
g
= 5
Ω; V
GE
= 15 V
Fig. 14 - Typical Switching Time vs. I
C
T
J
= 125 °C; L = 250 μH; V
CE
= 400 V
R
g
= 5
Ω; V
GE
= 15 V
Fig. 15 - Typical Energy Loss vs. R
g
T
J
= 150 °C; L = 250 μH; V
CE
= 600 V
I
CE
= 40 A; V
GE
= 15 V
Fig. 16 - Typical Switching Time vs. R
g
T
J
= 150 °C; L = 250 μH; V
CE
= 600 V
I
CE
= 40 A; V
GE
= 15 V
Fig. 17 - Typical Diode I
rr
vs. I
F
T
J
= 125 °C
Fig. 18 - Typical Diode I
rr
vs. R
g
T
J
= 125 °C; I
F
= 40 A
0
20
40
60
80
100
IC (A)
0
600
1200
1800
2400
3000
3600
4200
4800
E
n
e
rg
y
(μ
J
)
EOFF
EON
0
20
40
60
80
100
IC (A)
10
100
1000
S
w
ic
h
in
g
T
im
e
(n
s
)
tR
tdOFF
tF
tdON
0
10
20
30
40
50
60
Rg (Ω)
1000
2000
3000
4000
5000
6000
E
n
e
rg
y
(μ
J
)
EON
EOFF
0
10
20
30
40
50
60
Rg (Ω)
10
100
1000
10 000
S
w
ic
h
in
g
T
im
e
(n
s
)
tR
tdOFF
tF
tdON
10
20
30
40
50
60
70
IF (A)
0
10
20
30
40
50
I rr
(A
)
Rg = 5.0Ω
Rg = 10 Ω
Rg = 30 Ω
Rg = 50 Ω
0
10
20
30
40
50
60
Rg (Ω)
10
20
30
40
50
I rr
(A
)