Vishay high power products, Half bridge" igbt mtp (ultrafast npt igbt), 80 a – C&H Technology 40MT120UHTAPbF User Manual
Page 6
Document Number: 94507
For technical questions, contact:
www.vishay.com
Revision: 01-Mar-10
5
40MT120UHAPbF, 40MT120UHTAPbF
"Half Bridge" IGBT MTP
(Ultrafast NPT IGBT), 80 A
Vishay High Power Products
Fig. 7 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 80 μs
Fig. 8 - Typical Diode Forward Characteristics
t
p
= 80 μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= - 40 °C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 125 °C
Fig. 12 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
0
2
4
6
8
10
VCE (V)
0
20
40
60
80
100
120
140
160
I C
E
(A
)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0
VF (V)
0
20
40
60
80
100
120
I F
(A
)
-40°C
25°C
125°C
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(V
)
ICE = 80A
ICE = 40A
ICE = 20A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(V
)
ICE = 80A
ICE = 40A
ICE = 20A
5
10
15
20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
C
E
(V
)
ICE = 80A
ICE = 40A
ICE = 20A
0
5
10
15
20
VGE (V)
0
50
100
150
200
250
300
350
I C
E
(A
)
TJ = 25°C
TJ = 125°C