C&H Technology 20MT120UFP - Manual (Page 8)

Document Number: 94505 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Mar-10 7
20MT120UFP
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Vishay High Power Products
Fig. 19 - Typical Diode I
rr
vs. dI
F
/dt
V
CC
= 400 V; V
GE
= 15 V; I
CE
= 5.0 A; T
J
= 150 °C
Fig. 20 - Typical Diode Q
rr
vs. dI
F
/dt
V
CC
= 400 V; V
GE
= 15 V; T
J
= 150 °C
Fig. 21 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
Fig. 22 - Typical Gate Charge vs. V
GE
I
CE
= 5.0 A; L = 600 μH
Fig. 23 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0 200 400 600 800 1000
diF /dt (A/μs)
10
15
20
25
30
35
40
I
R
R
)
A(
0 200 400 600 800 1000 1200
diF /dt (A/μs)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Q
R
R
)
C
μ(
5.0 Ω
30 Ω
10 Ω
50 Ω
30A
20A
10A
0 20 40 60 80 100
VCE (V)
10
100
1000
10000
)
F
p(
e
c
n
ati
c
a
p
a
C
Cies
Coes
Cres
0 40 80 120 160 200
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
V
E
G
)
V(
600V
1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Z
(
e
s
n
o
p
s
e
R l
a
mr
e
h
T
C
J
ht
)
0.20
0.10
D = 0.50
0.01
0.02
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.161 0.000759
0.210 0.017991
0.147 0.06094
τ J
τ
J
τ 1
τ
1
τ
2
τ
2 τ 3
τ
3
R 1
R 1 R 2
R 2 R 3
R 3
τ
τ
C
Ci= i/Ri
Ci= τi/Ri