C&H Technology 20MT120UFP - Manual (Page 2)

Document Number: 94505 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Mar-10 1
"Full Bridge" IGBT MTP (Ultrafast NPT IGBT), 40 A
20MT120UFP
Vishay High Power Products
FEATURES
• Ultrafast Non Punch Through (NPT) technology
• Positive V
CE(on)
temperature coefficient
• 10 μs short circuit capability
• HEXFRED ® antiparallel diodes with ultrasoft reverse
recovery
• Low diode V
F
• Square RBSOA
• Aluminum nitride DBC
• Very low stray inductance design for high speed operation
• UL approved file E78996
• Speed 8 kHz to 60 kHz
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
BENEFITS
• Optimized for welding, UPS and SMPS applications
• Rugged with ultrafast performance
• Outstanding ZVS and hard switching operation
• Low EMI, requires less snubbing
• Excellent current sharing in parallel operation
• Direct mounting to heatsink
• PCB solderable terminals
• Very low junction to case thermal resistance
PRODUCT SUMMARY
V
CES
1200 V
I
C
at T
C
= 25 °C 40 A
V
CE(on)
3.29 V
MTP
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter breakdown voltage V
CES
1200 V
Continuous collector current I
C
T
C
= 25 °C 40
A
T
C
= 106 °C 20
Pulsed collector current I
CM
100
Clamped inductive load current I
LM
100
Diode continuous forward current I
F
T
C
= 106 °C 25
Diode maximum forward current I
FM
100
Gate to emitter voltage V
GE
± 20
V
RMS isolation voltage V
ISOL
Any terminal to case, t = 1 minute 2500
Maximum power dissipation (only IGBT) P
D
T
C
= 25 °C 240
W
T
C
= 100 °C 96