C&H Technology 20MT120UFP - Manual (Page 6)

Document Number: 94505 For technical questions, contact: [email protected] www.vishay.com
Revision: 01-Mar-10 5
20MT120UFP
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Vishay High Power Products
Fig. 7 - Typical IGBT Output Characteristics
T
J
= 125 °C; t
p
= 80 μs
Fig. 8 - Typical Diode Forward Characteristics
t
p
= 80 μs
Fig. 9 - Typical V
CE
vs. V
GE
T
J
= - 40 °C
Fig. 10 - Typical V
CE
vs. V
GE
T
J
= 25 °C
Fig. 11 - Typical V
CE
vs. V
GE
T
J
= 125 °C
Fig. 12 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
0 2 4 6 8 10
VCE (V)
0
20
40
60
80
100
I
E
C
)
A(
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0.0 1.0 2.0 3.0 4.0 5.0
V (V)
0
20
40
60
80
100
120
I F
F
)
A(
-40°C
25°C
125°C
5 10 15 20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
E
C
)
V(
ICE = 40A
ICE = 20A
ICE = 10A
5 10 15 20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
E
C
)
V(
ICE = 10A
ICE = 20A
ICE = 40A
5 10 15 20
VGE (V)
0
2
4
6
8
10
12
14
16
18
20
V
E
C
(V
)
ICE = 10A
ICE = 20A
ICE = 40A
0 5 10 15 20
VGE (V)
0
50
100
150
200
250
300
I
E
C
)
A(
TJ = 25°C
TJ = 150°C