Vishay high power products, Full bridge" igbt mtp (ultrafast npt igbt), 40 a – C&H Technology 20MT120UFP User Manual
Page 4
Document Number: 94505
For technical questions, contact:
www.vishay.com
Revision: 01-Mar-10
3
20MT120UFP
"Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Vishay High Power Products
DIODE SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Diode forward voltage drop
V
FM
I
C
= 20 A
-
2.48
2.94
V
I
C
= 40 A
-
3.28
3.90
I
C
= 20 A, T
J
= 125 °C
-
2.44
2.84
I
C
= 40 A, T
J
= 125 °C
-
3.45
4.14
I
C
= 20 A, T
J
= 150 °C
-
2.21
2.93
Reverse recovery energy of the diode
E
rec
V
GE
= 15 V, R
g
= 5
Ω, L = 200 μH
V
CC
= 600 V, I
C
= 20 A
T
J
= 125 °C
-
420
630
μJ
Diode reverse recovery time
t
rr
-
98
150
ns
Peak reverse recovery current
I
rr
-
33
50
A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
Junction to case
IGBT
R
thJC
-
0.35
0.52
°C/W
Diode
-
0.40
0.61
Case to sink per module
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
-
0.06
-
Clearance
External shortest distance in air between 2 terminals
5.5
-
-
mm
Creepage
Shortest distance along external surface of the
insulating material between 2 terminals
8
-
-
Mounting torque
A mounting compound is recommended and the
torque should be checked after 3 hours to allow for
the spread of the compound. Lubricated threads.
3 ± 10 %
Nm
Weight
66
g