C&H Technology 20MT120UFP - Manual (Page 3)

www.vishay.com For technical questions, contact: [email protected] Document Number: 94505
2 Revision: 01-Mar-10
20MT120UFP
Vishay High Power Products "Full Bridge" IGBT MTP
(Ultrafast NPT IGBT), 40 A
Note
(1) I
CES
includes also opposite leg overall leakage
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
(BR)CES
V
GE
= 0 V, I
C
= 250 μA 1200 - - V
Temperature coefficient of breakdown voltage ΔV
(BR)CES
/ ΔT
J
V
GE
= 0 V, I
C
= 3 mA (25 °C to 125 °C) - + 1.3 - V/°C
Collector to emitter saturation voltage V
CE(on)
V
GE
= 15 V, I
C
= 20 A - 3.29 3.59
V
V
GE
= 15 V, I
C
= 40 A - 4.42 4.66
V
GE
= 15 V, I
C
= 20 A, T
J
= 125 °C - 3.87 4.11
V
GE
= 15 V, I
C
= 40 A, T
J
= 125 °C - 5.32 5.70
V
GE
= 15 V, I
C
= 20 A, T
J
= 150 °C - 3.99 4.27
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 250 μA 4 - 6
Temperature coefficient of threshold voltage V
GE(th)
/ ΔT
J
V
CE
= V
GE
, I
C
= 3 mA (25 °C to 125 °C) - - 14 - mV/°C
Transconductance g
fe
V
CE
= 50 V, I
C
= 20 A, PW = 80 μs - 17.5 - S
Zero gate voltage collector current I
CES
(1)
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 25 °C - - 250 μA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 125 °C - 0.7 3.0
mA
V
GE
= 0 V, V
CE
= 1200 V, T
J
= 150 °C - 2.9 9.0
Gate to emitter leakage current I
GES
V
GE
= ± 20 V - - ± 250 nA
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
g I
C
= 20 A
V
CC
= 600 V
V
GE
= 15 V
- 176 264
nC Gate to emitter charge (turn-on) Q
ge
- 19 30
Gate to collector charge (turn-on) Q
gc
- 89 134
Turn-on switching loss E
on
V
CC
= 600 V, I
C
= 20 A, V
GE
= 15 V,
R
g
= 5 Ω, L = 1 mH, T
J
= 25 °C,
energy losses include tail and
diode reverse recovery
- 0.92 -
mJ
Turn-off switching loss E
off
- 0.46 -
Total switching loss E
tot
- 1.38 -
Turn-on switching loss E
on
V
CC
= 600 V, I
C
= 20 A, V
GE
= 15 V,
R
g
= 5 Ω, L = 1 mH, T
J
= 125 °C,
energy losses include tail and
diode reverse recovery
- 1.29 -
Turn-off switching loss E
off
- 0.81 -
Total switching loss E
tot
- 2.1 -
Input capacitance C
ies V
GE
= 0 V
V
CC
= 30 V
f = 1.0 MHz
- 2530 3790
pF Output capacitance C
oes
- 344 516
Reverse transfer capacitance C
res
- 78 117
Reverse bias safe operating area RBSOA
T
J
= 150 °C, I
C
= 120 A
V
CC
= 1000 V, V
p
= 1200 V
R
g
= 5 Ω, V
GE
= + 15 V to 0 V
Fullsquare
Short circuit safe operating area SCSOA
T
J
= 150 °C
V
CC
= 900 V, V
p
= 1200 V
R
g
= 5 Ω, V
GE
= + 15 V to 0 V
10 - - μs