Toshiba PROSEC T3H - Manual (Page 22)

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PROSEC T3H
1. T3H Overview
1.4 Specifications
Functional specifications
Type PU325H PU326H
Control method Stored program, cyclic scan system
Scan system Floating scan or constant scan (10 - 200 ms, 10 ms units)
I/O update Batch I/O refresh (direct I/O instruction available)
Program memory Main memory: RAM (battery backed)
Auxiliary memory: EEPROM (built-in), IC card (option)
Program capacity 32 k steps 64 k steps
Programming language Ladder diagram with function block,
SFC (sequential function chart)
Instructions Ladder Basic instructions: 24 types,
Function instructions: 206 types
SFC Step, transition, sequence selection, simultaneous
sequences, jump, etc.
Execution speed 0.09
µ
s/contact, 0.18
µ
s/coil,
0.54
µ
s/transfer, 0.90
µ
s/addition
Multitasking 1 Main program
4 Sub-program
1 Timer interrupt (1 - 1000 ms, 1 ms units)
8 I/O interrupt (task switch 500
µ
s or less)
256 Subroutine
I/O capacity 2432 points (using 32 points I/O modules)
4864 points (using 64 points I/O modules)
Local I/O space: 8192 points / 512 words
(X/XW and Y/YW: batch I/O)
(I/IW and O/OW: direct I/O)
User data Auxiliary relay 16000 points / 1000 words (R/RW)
Special relay 4096 points / 256 words (S/SW)
Timer 1000 points (T./T)
(proportion of 0.01s and 0.1s timer is user definable)
Counter 512 points (C./C)
Data register 8192 words (D)
(leading 4096 words are stored in EEPROM)
Link register 16000 points / 2048 words (Z/W) (for TOSLINE-S20)
Link relay 4096 points / 256 words (L/LW) (for TOSLINE-F10)
File register 32768 words (F)
Index register 3 words (I, J, K)
Retentive memory F register and user defined ranges of RW, T, C, D
RAS Self-diagnosis Power interruption, main/expansion power failure,
CPU/RAM/ROM check, I/O response, I/O bus check, I/O
registration, I/O parity, battery level, watch dog timer,
program check, others
Monitoring Event history record, scan time measurement, others
Debugging On-line trace monitor, force, sampling trace, status latch,
single step/N scan execution, break point, others
RAM data back-up Lithium battery (type: TBT911
∗
AS)
Recommended replacement: every 2 years