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Renesas SuperH HS7710KCM02HE User Manual

Page 14

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8

CPU

3.3 V

4.7 k

E10A

TMS, TRST

Diode equivalent to
1SS106*

Note: Schottky-barrier diode

Figure 1.4 Countermeasure against the Leakage Current in the Emulator

The result above differs depending on the circuit and can only be used as a reference.

7. The resistance values shown in figure 1.5 are recommended.

8. For the pin processing in cases where the emulator is not used, refer to the hardware

manual of the related device.

9. For the AUDCK pin, guard the pattern between the H-UDI port connector and the

MPU at GND level.

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