Philips P89LPC903 User Manual
Page 98
Philips Semiconductors
User’s Manual - Preliminary -
P89LPC901/902/903
FLASH PROGRAM MEMORY
2003 Dec 8
98
r
Figure 14-4: Assembly language routine to erase/program a flash element
Figure 14-5: C-language routine to erase/program a flash element
;*
Inputs:
*
;*
R5 = data to write(byte)
*
;*
R7 = element address(byte)
*
;*
Outputs:
*
;*
None
*
CONF EQU 6CH
WR_ELEM:
MOV FMADRL,R7
;write
the
address
MOV
FMCON,#CONF
;load CONF command
MOV
FMDAT,R5
;write
the
data
MOV
R7,FMCON
;copy status for return
MOV
A,R7
;read
status
ANL
A,#0FH
;save only four lower bits
JNZ
BAD
;see if good or bad
CLR
C
;clear error flag if good
RET
;and
return
BAD:
SETB C
;set error flag if bad
RET
;and
return
unsigned char
Fm_stat;
// status result
bit PGM_EL (unsigned char, unsigned char);
bit prog_fail;
void main ()
{
prog_fail=PGM_EL(0x02,0x1C);
}
bit PGM_EL (unsigned char el_addr, unsigned char el_data)
{
#define CONF
0x6C
// access flash elements
FMADRL
= el_addr;
//write element address to addr reg
FMCON = CONF;
//load command, clears page reg
FMDATA
= el_data;
//write
data and start the cycle
Fm_stat = FMCON;
//read the result status
if ((Fm_stat & 0x0F)!=0) prog_fail=1; else prog_fail=0;
return(prog_fail);
}