Cirrus Logic CS1616 - Manual (Page 6)

CS1615/16
6 DS961F1
3.2 Thermal Resistance
3.3 Absolute Maximum Ratings
Characteristics conditions:
All voltages are measured with respect to GND.
Note: 8. Long-term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation at
the rate of 50 mW /°C for variation over temperature.
WARNING:
Operation at or beyond these limits may result in permanent damage to the device.
Normal operation is not guaranteed at these extremes.
Symbol Parameter SOIC TSSOP Unit

JA
Junction-to-Ambient Thermal Impedance 2 Layer PCB
4 Layer PCB 119
105
138
103 °C/W
°C/W

JC
Junction-to-Case Thermal Impedance 2 Layer PCB
4 Layer PCB 50
44 44
28 °C/W
°C/W
Pin Symbol Parameter Value Unit
14 V
DD
IC Supply Voltage 18.5 V
2,8,9,
10,11,16
Analog Input Maximum Voltage -0.5 to (V
DD
+0.5) V
2,8,9,
10,11,16
Analog Input Maximum Current 5 mA
13 V
GD
Gate Drive Output Voltage -0.3 to (V
DD
+0.3) V
13 I
GD
Gate Drive Output Current -1.0 / +0.5 A
5 I
SOURCE
Current into Pin 1.1 A
3 I
CLAMP
Clamp Output Current 15 mA
- P
D
Total Power Dissipation 400 mW
- T
J
Junction Temperature Operating Range (Note 8) -40 to +125 °C
- T
Stg
Storage Temperature Range -65 to +150 °C
All Pins ESD
Electrostatic Discharge Capability Human Body Model
Charged Device Model
2000
500
V
V