Diodes PAM8320 - Manual (Page 3)

PAM8320
Document number: DS36610 Rev. 1 - 2
3 of 11
www.diodes.com
October 2013
© Diodes Incorporated
PAM8320
New Product
A PRODUCT LINE OF
DIODES INCORPORATED
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Parameter Rating Unit
Supply Voltage (V
CC
) 18 V
Logic Input Voltage (SDN, MUTE) -0.3 to V
CC
+0.3 V
Analog Input Voltage (I
N
) -0.3 to 5.5 V
Storage Temperature -65 to +150 °C
Maximum Junction Temperature +150 °C
Junction to ambient thermal resistance 40 °C/W
Recommended Operating Conditions
(@T
A
= +25°C, unless otherwise specified.)
Symbol Parameter Min Max Unit
V
CC
Supply Voltage 4.5 15 V
T
A
Operating Ambient Temperature Range -40 +85 °C
T
J
Junction Temperature Range -40 +125 °C
Electrical Characteristics
(@T
A
= +25°C, V
CC
= 12V, Gain = 20dB, R
L
= L(33μH) + R + L(33μH), unless otherwise noted.)
Symbol PARAMETER Test Conditions MIN TYP MAX Units
|VOS|
Class-D output offset voltage(measured
differently)
V
i
=0V, A
v
=20dB — 20 100 mV
I
CC(q)
Quiescent supply current SDN=3.0V, MUTE=0V, No Load — 15 30 mA
I
CC(MUTE)
Quiescent supply current in mute mode MUTE=2.0V, No load — 8 20 mA
I
CC(SDN)
Quiescent current in shutdown mode SDN=0.5V, No load — 20 40 uA
R
ds(on)
Drain-source on-state resistance I
O
=0.5A — 150 — mΩ
P
SRR
Power Supply Rejection Ratio V
ripple
=200mVpp, f=1kHz,gain=20dB — -60 — dB
P
o
Output Power at 1% THD+N f=1kHz — 15 —
W
Output Power at 10% THD+N f=1kHz — 20 —
THD+N Total harmonic distortion + noise f=1kHz, P
O
=7W — 0.05 — %
V
n
Output integrated noise floor
20Hz to 22kHz, A-weighted,
Gain=20dB
— 300 — uV
SNR Signal-to-noise ratio
Max output at THD+N<1%, f=1kHz,
Gain=20dB
— 95 — dB
OTP Thermal trip point — — +160 — °C
OTH Thermal hysteresis — — +40 — °C
f
osc
Oscillator frequency — — 300 — kHz
V
IH_SDN
SDN Input High — 3 — — —
V
IL_SDN
SDN Input Low — — — 0.5 —
V
IH_MUTE
MUTE Input High — 2 — — —
V
IL_MUTE
MUTE Input Low — — — 0.5 —