Diodes PAM8301 - Manual (Page 3)

PAM8301
Document number: DSxxxxx Rev. 1 - 3
3 of 10
www.diodes.com
July 2013
© Diodes Incorporated
PAM8301
A Product Line of
Diodes Incorporated
Thermal Information
Parameter Package Symbol Max Unit
Thermal Resistance (Junction to Ambient) TSOT26 θ
JA
250
°C/W
Thermal Resistance (Junction to Case) TSOT26 θ
JC
130
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, Gain = 24dB, R
L
= 8 Ω, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
V
DD
Supply Voltage Range 2.5 5.5 V
I
Q
Quiescent Current No Load 4 8 mA
I
SHDN
Shutdown Current V
SHDN
= 0V 1 µA
V
SH
SHDN Input High 1.2
V
V
SL
SHDN Input Low 0.4
R DS(ON)
Drain-Source On-State Resistance I DS = 100mA
P MOSFET 0.45
Ω
N MOSFET 0.20
P
O
Output Power f = 1kHz
THD+N = 1% 1.2
W
THD+N = 10% 1.5
THD+N Total Harmonic Distortion Plus Noise
R
L
= 8 Ω, P
O
= 200mW 0.2
%
R
L
= 8 Ω, P
O
= 0.5W 0.3
PSRR AC Power Supply Ripple Rejection No Inputs, f = 1kHz, V PP = 200mV 45 50 dB
G V
Gain 24 dB
V
N
Output Noise
No A-Weighting 180
µV
A-Weighting 120
f
OSC
Oscillator Frequency 200 250 300 kHz
η Peak Efficiency f = 1kHz 85 88 %
SNR Signal to Noise Ratio f = 20 to 20kHz 78 dB
OTP Over Temperature Protection 135 °C
OTH Over Temperature Hysterisis 30 °C