Diodes PAM8012 - Manual (Page 4)

PAM8012
Document number: DSxxxxx Rev. 1 - 3
4 of 14
www.diodes.com
October 2012
© Diodes Incorporated
PAM8012
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, V
DD
= 5V, unless otherwise specified.)
Symbol Parameter Test Conditions Min Typ Max Units
V
DD
Supply Voltage 2.5 5.5 V
P
O
Output Power
R
PL
= 110KΩ, f = 3kHz, R = 4Ω V
DD
= 5V 2.0 W
R
PL
= 110KΩ, f = 3kHz, R = 8Ω V
DD
= 5V 1.0
THD+N Total Harmonic Distortion Plus Noise
V
DD
= 5V, P
O
= 1W, R = 4Ω
f = 1kHz
0.08
V
DD
= 3.6V, P
O
= 2W, R = 4Ω 0.08 %
V
DD
= 5V, P
O
= 1W, R = 8Ω
f = 1kHz
0.08
V
DD
= 5V, P
O
= 0.5W, R = 8Ω 0.08 %
PSRR AC Power Supply Ripple Rejection
f = 217Hz, Inputs AC-Grounded
with C
IN
= 0.1µF
V
DD
= 5.0V -75
V
DD
= 3.6V -75
SNR Signal to Noise Ratio THD = 1%, f = 1KHz
V
DD
= 5.0V 95 dB
V
DD
= 3.6V 95
V
N
Output Noise C
IN
= 0.1µF, Inputs AC-Grounded
No A-Weighting 60
A-Weighting 40 µV
η Peak Efficiency
R
L
= 8Ω f = 1kHz 90
R
L
= 4Ω 87 %
I
Q
Quiescent Current V
EN
= 5.0V, V
DD
= 5V, PL = 0V No Load 4.2 mA
I
SD
Shutdown Current V
DD
= 2.5V to 5.5V, V
EN
= 0V No Load 1 µA
|V
OS
| Offdet Voltage V
DD
= 5V -20 +20 mV
R
IN
Input Resistor V
DD
= 5V 31 KΩ
G
V
Closed Loop Gain V
DD
= 5V 18 dB
f
SW
Switching Frequency V
DD
= 5V 250 KHz
T
ON
Turn-On Time V
DD
= 5V 45 mS
OTP Over Temperature Protection V
DD
= 5V No Load 150 °C
OTH Over Temperature Hysterisis V
DD
= 5V No Load 40 °C
V
ENH
High-Level EN Voltage V
DD
= 5V 1.4 V
V
ENL
Low-Level EN Voltage V
DD
= 5V 0.4 V
AR Maximum Attenuation Range Anti-Saturation Active from +18dB to -18dB 26 dB