Diodes ZXTP19100CG - Manual (Page 5)

ZXTP19100CG
Issue 1- February 2008 5 www.zetex.com
© Zetex Semiconductors plc 2008
Typical characteristics
1m 10m 100m 1 10
10m
100m
1
10m 100m 1
0.0
0.1
0.2
0.3
0.4
1m 10m 100m 1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1m 10m 100m 1
0.2
0.4
0.6
0.8
1.0
1m 10m 100m 1
0.2
0.4
0.6
0.8
1.0
1.2
10m 100m 1 10 100
0
50
100
150
200
250
300
350
400
0
100
200
300
400
500
600
V
CE(SA T)
v I
C
T am b=25° C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
-
V
C
E
( S
A
T
)
(
V
)
- I
C
Collector Current (A)
100° C
V
BE(SA T)
v I
C
I
C
/I
B
=10
150° C
25° C
-55° C
-
V
C
E
( S
A
T
)
(
V
)
- I
C
Collector Current (A)
150° C
h
FE
v I
C
V
CE
=2V
-55° C
25° C
100° C
N
o
r
m
a
l i s
e
d
G
a
i
n
- I
C
Collector Current (A)
150° C
25° C
V
CE(SA T)
v I
C
I
C
/I
B
=10
100° C
-55° C
-
V
B
E
( S
A
T
)
(
V
)
- I
C
Collector Current (A)
150° C
V
BE(ON)
v I
C
V
CE
=2V
100° C
25° C
-55° C
-
V
B
E
( O
N
)
(
V
)
- I
C
Collector Current (A)
Ci bo
Capacitance v Voltage
f = 1MHz
Cobo C
a
p
a
c
i
t a
n
c
e
(
p
F
)
- Voltage(V)
T
yp
i ca
l
G
a
i n
( h
F
E
)