Diodes ZXTP19100CG - Manual (Page 4)

ZXTP19100CG
Issue 1- February 2008 4 www.zetex.com
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-Base breakdown
voltage BV
CBO
-110 -135 V I
C
= -100
µ
A
Collector-Emitter
breakdown voltage BV
CEO
-100 -135 V I
C
= -10mA (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width ≤ 300µs; duty cycle ≤ 2%.
Collector-Base breakdown
voltage (forward blocking) BV
CEX
-110 -130 V I
C
= -100
µ
A
Emitter-Collector
breakdown voltage
(reverse blocking) BV
ECX
-7 -8.3 V I
E
= -100
µ
A, R
BC
< 1k
Ω
or
0.25V > V
BC
> -0.25V
Emitter-Collector
breakdown voltage
(reverse blocking) BV
ECO
-7 -8.7 V I
E
= -100
µ
A
Emitter-Base breakdown
voltage BV
EBO
-7 -8.3 V I
E
= -100
µ
A
Collector-Base cut-off
current I
CBO
<1 -50
-0.5
nA
µ
A
V
CB
= -110V
V
CB
= -110V, T
amb
=100°C
Emitter cut-off current I
EBO
<1 -50 nA V
EB
= -5.6V
Collector-Emitter
saturation voltage V
CE(sat)
-100
-100
-180
-220 -130
-125
-230
-295 mV
mV
mV
mV I
C
= -0.5A, I
B
= -20mA (*)
I
C
= -1A, I
B
= -100mA (*)
I
C
= -1A, I
B
= -50mA (*)
I
C
= -2A, I
B
= -200mA (*)
Base-Emitter saturation
voltage V
BE(sat)
-890 -1000 mV I
C
= -2A, I
B
= -200mA (*)
Base-Emitter turn-on
voltage V
BE(on)
-840 -950 mV I
C
= -2A, V
CE
= -2V (*)
Static forward current
transfer ratio h
FE
200
70
20
300
130
28
500 I
C
= -100mA, V
CE
= -2V (*)
I
C
= -1A, V
CE
= -2V (*)
I
C
= -2A, V
CE
= -2V (*)
Transition frequency f
T
142 MHz I
C
= -100mA, V
CE
= -10V
f = 50MHz
Input capacitance C
ibo
291 400 pF V
EB
= -0.5V, f = 1MHz (*)
Output capacitance C
obo
23.5 40 pF V
CB
= -10V, f = 1MHz (*)
Delay time t
d
24.7 ns
I
C
= -500mA, V
CC
= -10V,
I
B1
= -I
B2
= -50mA
R
b
=100
Ω
, R
c
=20
Ω
Rise time t
r
22.4 ns
Storage time t
s
660 ns
Fall time t
f
107 ns