Diodes DRD (xxxx) W - Manual (Page 3)

DS30573 Rev. 10 - 2 3 of 9
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DRD (xxxx) W
© Diodes Incorporated
Electrical Characteristics, DRDN010W NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain h
FE
150 800 ⎯ I
C
= 100mA, V
CE
= 1V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 0.5 V I
C
= 300mA, I
B
= 30mA
Collector-Base Breakdown Voltage V
(BR)CBO
45 ⎯ V I
C
= 100 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
18 ⎯ V I
C
= 1mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
5 ⎯ V I
E
= 100 μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 1 μA
V
CB
= 40V, I
E
= 0
Emitter Cutoff Current I
EBO
⎯ 1 μA
V
EB
= 4V, I
C
= 0
Current Gain-Bandwidth Product f
T
100 ⎯ MHz V
CE
= 10V, I
C
= 50mA, f = 100MHz
Capacitance C
obo
⎯ 8 pF V
CB
= 10V, I
E
= 0, f = 1MHz
Electrical Characteristics, DRDN005W NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Collector-Base Breakdown Voltage V
(BR)CBO
80 ⎯ V I
C
= 100
μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
80 ⎯ V I
C
= 1.0mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
4.0 ⎯ V I
E
= 100
μA, I
C
= 0
Collector Cutoff Current I
CBO
⎯ 100 nA
V
CB
= 60V, I
E
= 0
V CB = 80V, I E = 0
Collector Cutoff Current I
CES
⎯ 100 nA
V
CE
= 60V, I
BO
= 0V
V
CE
= 80V, I
BO
= 0V
DC Current Gain h FE
100 ⎯ ⎯
I C = 10mA, V CE = 1.0V
I
C
= 100mA, V
CE
= 1.0V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ 0.25 V I
C
= 100mA, I
B
= 10mA
Base-Emitter Saturation Voltage V
BE(SAT)
⎯ 1.2 V I
C
= 100mA, V
CE
= 1.0V
Current Gain-Bandwidth Product f
T
100 ⎯ MHz
V
CE
= 2.0V, I
C
= 10mA,
f = 100MHz
Electrical Characteristics, DRDP006W PNP Transistor
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
DC Current Gain h
FE
100 300 ⎯ I
C
= -150mA, V
CE
= -10V
Collector-Emitter Saturation Voltage V
CE(SAT)
⎯ -0.4 V I
C
= -150mA, I
B
= -15mA
Collector-Base Breakdown Voltage V
(BR)CBO
-60 ⎯ V I
C
= -10 μA, I
E
= 0
Collector-Emitter Breakdown Voltage V
(BR)CEO
-60 ⎯ V I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage V
(BR)EBO
-5 ⎯ V I
E
= -10 μA, I
C
= 0
Collector Cutoff Current I CBO
⎯ -10 nA V CB = -50V, I E = 0
Current Gain-Bandwidth Product f
T
200 ⎯ MHz V
CE
= -20V, I
C
= -50mA, f = 100MHz
Capacitance C obo
⎯ 8 pF V CB = -10V, I E = 0, f = 1MHz
Electrical Characteristics, DRDNB16W Pre-Biased NPN Transistor
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
V
l(off)
0.3 ⎯ ⎯ V V
CC
= 5V, I
O
= 100 μA
Input Voltage
V
l(on)
⎯ ⎯ 2.0 V V
O
= 0.3V, I
O
= 20mA
Output Voltage V
O(on)
⎯ ⎯ 0.3V V I
O
/I
l
= 50mA/2.5mA
Input Current I
l
⎯ ⎯ 7.2 mA V
I
= 5V
Output Current I
O(off)
⎯ ⎯ 0.5 μA V
CC
= 50V, V
I
= 0V
DC Current Gain G
l
56 ⎯ ⎯ ⎯ V
O
= 5V, I
O
= 50mA
Gain-Bandwidth Product f
T
⎯ 200 ⎯ MHz V
CE
= 10V, I
E
= 5mA, f = 100MHz