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Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DT2042-04SO User Manual

Page 2

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DT2042-04SO

Document number: DS36296 Rev. 2 - 2

2 of 5

www.diodes.com

August 2013

© Diodes Incorporated

DT2042-04SO

ADVAN

CE I

N

F

O

RM

ATI

O

N



Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit Conditions

Peak Pulse Current, per IEC 61000-4-5

I

PP

±10 A

I/O to V

SS

, 8/20 μs

Peak Pulse Power, per IEC 61000-4-5

P

PP

105 W

I/O to V

SS

, 8/20 μs

Operating Voltage (DC)

V

DC

5.5

V

I/O to V

SS

ESD Protection – Contact Discharge, per IEC61000-4-2

V

ESD_contact

±30 kV

I/O to V

SS

ESD Protection – Air Discharge, per IEC 61000-4-2

V

ESD_air

±30 kV

I/O to V

SS

Operating Temperature

T

OP

-55 to +85

°C

Storage Temperature

T

STG

-55 to +150

°C


Thermal Characteristics

Characteristic Symbol

Value Unit

Power Dissipation Typical (Note 5)

P

D

300

mW

Thermal Resistance, Junction to Ambient Typical (Note 5)

R

θJA

417 °C/W


Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Conditions

Reverse Working Voltage

V

RWM

5.5 V

I/O to V

SS

Reverse Current(Note6)

I

R

1

μA

V

R

= 5V, any I/O to V

SS

Reverse Breakdown Voltage

V

BR

6

9 V

I

R

= 1mA, I/O to V

SS

Forward Clamping Voltage

V

F

-1.0 -0.8

V

I

F

= -15mA, I/O to V

SS

Holding Voltage

V

H

5.5

V

Trigger Voltage

V

TRIG

9 9.5 V

Reverse Clamping Voltage (Note 7)

V

C_5A

7.5

V

I

PP

= 5A, I/O to V

SS

, 8/20 μs

Reverse Clamping Voltage (Note 7)

V

C_10A

9 10.5 V

I

PP

= 10A, I/O to V

SS

, 8/20 μs

ESD Clamping Voltage

V

ESD

9

V

TLP, 10A, tp = 100 ns, I/O to V

SS,

per Fig. 7

Dynamic Resistance

R

DIF

0.25

TLP, 10A, tp = 100 ns, I/O to V

SS

Channel Input Capacitance

C

I/O

1.2 1.5 pF

V

R

= 2.5V, f = 1MHz

Variation of Channel Input Capacitance

C

I/O

0.02

pF

Vss = 0V,I/O = 2.5V, f =1MHz, T=25°C ,
I/O_x to V

SS

– I/O_y to V

SS

Notes:

5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website
at http://www.diodes.com.

6. Short duration pulse test used to minimize self-heating effect.

7. Clamping voltage value is based on an 8x20µs peak pulse current (I

pp

) waveform.

T , AMBIENT TEMPERATURE (°C)

Figure 1 Pulse Derating Curve

A

P

EAK

P

U

L

SE DE

R

A

T

IN

G

IN

%

O

F

PEAK

PO

W

E

R O

R

CU

RRENT

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.5

-60 -40 -20

0

20 40 60 80 100 120 140 160

B

R

EA

KD

O

WN

V

O

LT

A

G

E,

T

R

IG

G

E

R

V

O

LT

A

G

E,

HO

LD

IN

G

VO

LT

AG

E

(V

)

T , AMBIENT TEMPERATURE(°C)

A

Figure 2 BV, Trigger Voltage, Holding Voltage vs.

Ambient Temperature

BV

VTRIG

VH