Diodes DMG4511SK4 - Manual (Page 5)

DMG4511SK4
Document number: DS32042 Rev. 4 - 2
5 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3.0
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
TE T
HRE
SHO
L
D
VO
L
T
AG
E
(V
)
GS
(T
H
)
I = 250µA
D
0
2
4
6
8
10
12
14
16
18
20
0.2 0.4 0.6 0.8 1.0 1.2
T = 25°C
A
Fig. 8 Diode Forward Voltage vs. Current
V , SOURCE-DRAIN VOLTAGE (V)
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
200
400
600
800
1,000
1,200
1,400
0 5 10 15 20 25 30 35
Fig. 9 Typical Total Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
f = 1MHz
C
iss
C
rss
C
oss
5 10 15 20 25 30 35
Fig. 10 Typical Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.001 0.01 0.1 1 10 100 1,000
Fig. 11 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001 0.0001
0.001
0.01
0.1
1
r(t),
T
R
ANSI
E
N
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 80°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5