Diodes DMG4511SK4 - Manual (Page 3)

DMG4511SK4
Document number: DS32042 Rev. 4 - 2
3 of 9
www.diodes.com
July 2011
© Diodes Incorporated
DMG4511SK4
Electrical Characteristics – N-CHANNEL, Q1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
35 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0
μA
V
DS
= 35V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.0 - 3.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
25
50 35
65
mΩ
V GS = 10V, I D = 8A
V
GS
= 4.5V, I
D
= 6A
Forward Transfer Admittance |Y
fs
| - 4.5 - S V
DS
= 10V, I
D
= 8A
Diode Forward Voltage V
SD
- - 1.2 V V
GS
= 0V, I
S
= 8A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 850 - pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C oss
- 64.7 - pF
Reverse Transfer Capacitance C
rss
- 51.9 - pF
Gate Resistance R
g
- 1.6 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V GS = 10V) Q g
- 18.7 -
nC
V GS = 10V, V DS = 28V, I D = 8A
Total Gate Charge (V
GS
= 4.5V) Q
g
- 8.8 -
V
GS
= 4.5V, V
DS
= 28V,
I
D
= 8A
Gate-Source Charge Q
gs
- 2.6 -
Gate-Drain Charge Q
gd
- 2.1 -
Turn-On Delay Time t
D(on)
- 5.4 - ns
V DS = 18V, V GS = 10V,
R L = 18 Ω, R
G = 3.3 Ω,
I
D
= 1A
Turn-On Rise Time t
r
- 2.8 - ns
Turn-Off Delay Time t
D(off)
- 33.2 - ns
Turn-Off Fall Time t f
- 35.6 - ns
Electrical Characteristics – P-CHANNEL, Q2
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-35 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1.0 μA
V
DS
= -35V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.0 - -3.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
30
40 45
65
mΩ
V
GS
= -10V, I
D
= -6A
V
GS
= -4.5V, I
D
= -4A
Forward Transfer Admittance |Y
fs
| - 8 - S V
DS
= -10V, I
D
= -6A
Diode Forward Voltage V
SD
- -1.2 V V
GS
= 0V, I
S
= -6A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 985.2 - pF
V
DS
= -25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 90.6 - pF
Reverse Transfer Capacitance C
rss
- 75.3 - pF
Gate Resistance R
g
- 7.0 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -10V) Q
g
- 19.2 -
nC
V
GS
= -10V, V
DS
= -28V, I
D
= -6A
Total Gate Charge (V
GS
= -4.5V) Q
g
- 9.5 -
V
GS
= -4.5V, V
DS
= -28V,
I
D
= -6A
Gate-Source Charge Q
gs
- 2.0 -
Gate-Drain Charge Q
gd
- 3.5 -
Turn-On Delay Time t
D(on)
- 5.2 - ns
V
DS
= -18V, V
GS
= -10V,
R
L
= 18 Ω, R
G
= 3.3 Ω,
I
D
= -1A
Turn-On Rise Time t r
- 4.8 - ns
Turn-Off Delay Time t
D(off)
- 45.8 - ns
Turn-Off Fall Time t
f
- 29.5 - ns
Notes: 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.