New prod uc t, Electrical characteristics – q2 p-channel, Typical characteristics – q2 p-channel – Diodes DMC4040SSD User Manual
Page 7: Dmc4040ssd, A product line of diodes incorporated
DMC4040SSD
Document number: DS32120 Rev. 2 - 2
7 of 11
March 2011
© Diodes Incorporated
NEW PROD
UC
T
A Product Line of
Diodes Incorporated
DMC4040SSD
Electrical Characteristics – Q2 P-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-40 – – V
I
D
= -250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
– –
-1.0
μA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
– –
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-0.8 -1.3 -1.8 V
I
D
= -250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 11)
R
DS(on)
–
0.018 0.025
Ω
V
GS
= -10V, I
D
= -3A
0.030 0.045
V
GS
= -4.5V, I
D
= -3A
Forward Transconductance (Notes 11 & 12)
g
fs
–
16.6 – S
V
DS
= -5V, I
D
= -3A
Diode Forward Voltage (Note 11)
V
SD
–
-0.7 -1.0 V
I
S
= -1A, V
GS
= 0V
DYNAMIC CHARACTERISTICS (Note 12)
Input Capacitance
C
iss
–
1643
–
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
–
179
–
Reverse Transfer Capacitance
C
rss
–
128
–
Gate Resistance
R
g
⎯
6.43
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 13)
Q
g
–
14.0
–
nC
V
GS
= -4.5V
V
DS
= -20V
I
D
= -3A
Total Gate Charge (Note 13)
Q
g
–
33.7
–
V
GS
= -10V
Gate-Source Charge (Note 13)
Q
gs
–
5.5
–
Gate-Drain Charge (Note 13)
Q
gd
–
7.3
–
Turn-On Delay Time (Note 13)
t
D(on)
–
6.9
–
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -3A
Turn-On Rise Time (Note 13)
t
r
–
14.7
–
Turn-Off Delay Time (Note 13)
t
D(off)
–
53.7
–
Turn-Off Fall Time (Note 13)
t
f
–
30.9
–
Notes:
11.Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
12. For design aid only, not subject to production testing.
13. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q2 P-Channel
0
0.5
1
1.5
2
Fig. 12 Typical Output Characteristic
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
0
5
10
15
20
25
30
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
0
1
2
3
4
5
Fig. 13 Typical Transfer Characteristic
-V
, GATE-SOURCE VOLTAGE (V)
GS
0
5
10
15
20
25
30
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V
= -5V
DS