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New prod uc t, Electrical characteristics – q1 n-channel, Typical characteristics – q1 n-channel – Diodes DMC4040SSD User Manual

Page 4: Dmc4040ssd, A product line of diodes incorporated

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DMC4040SSD

Document number: DS32120 Rev. 2 - 2

4 of 11

www.diodes.com

March 2011

© Diodes Incorporated

NEW PROD

UC

T

A Product Line of

Diodes Incorporated

DMC4040SSD







Electrical Characteristics – Q1 N-CHANNEL

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS
Drain-Source Breakdown Voltage

BV

DSS

40

V

I

D

= 250

μA, V

GS

= 0V

Zero Gate Voltage Drain Current

I

DSS

1.0

μA

V

DS

= 40V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100

nA

V

GS

=

±20V, V

DS

= 0V

ON CHARACTERISTICS
Gate Threshold Voltage

V

GS(th)

0.8 1.3 1.8 V

I

D

= 250

μA, V

DS

= V

GS

Static Drain-Source On-Resistance (Note 8)

R

DS (ON)

0.013 0.025

V

GS

= 10V, I

D

= 3A

0.028 0.040

V

GS

= 4.5V, I

D

= 3A

Forward Transconductance (Notes 8 & 9)

g

fs

12.6

S

V

DS

= 5V, I

D

= 3A

Diode Forward Voltage (Note 8)

V

SD

0.7 1.0 V

I

S

= 1A, V

GS

= 0V

DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance

C

iss

1790

pF

V

DS

= 20V, V

GS

= 0V

f= 1MHz

Output Capacitance

C

oss

160

Reverse Transfer Capacitance

C

rss

120

Gate Resistance

R

g

1.03

V

DS

= 0V, V

GS

= 0V, f= 1MHz

Total Gate Charge (Note 10)

Q

g

16.0

nC

V

GS

= 4.5V

V

DS

= 20V

I

D

= 3A

Total Gate Charge (Note 10)

Q

g

37.6

V

GS

= 10V

Gate-Source Charge (Note 10)

Q

gs

7.8

Gate-Drain Charge (Note 10)

Q

gd

6.6

Turn-On Delay Time (Note 10)

t

D(on)

8.1

ns

V

DD

= 20V, V

GS

= 10V

I

D

= 3A

Turn-On Rise Time (Note 10)

t

r

15.1

Turn-Off Delay Time (Note 10)

t

D(off)

24.3

Turn-Off Fall Time (Note 10)

t

f

5.3

Notes:

8. Measured under pulsed conditions. Pulse width

≤ 300μs; duty cycle ≤ 2%

9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.






Typical Characteristics – Q1 N-Channel

0

5

10

15

20

25

30

0

0.5

1

1.5

2

Fig. 1 Typical Output Characteristic

V

, DRAIN-SOURCE VOLTAGE (V)

DS

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

V

= 3.5V

GS

V

= 2.5V

GS

V

= 3.0V

GS

V

= 4.0V

GS

V

= 4.5V

GS

V

= 8.0V

GS

0

5

10

15

20

25

30

0

1

2

3

4

5

Fig. 2 Typical Transfer Characteristic

V

, GATE-SOURCE VOLTAGE (V)

GS

I,

D

R

AI

N

C

U

R

R

E

N

T

(A

)

D

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

V

= 5V

DS