Diodes DMC4040SSD - Manual (Page 2)

DMC4040SSD
Document number: DS32120 Rev. 2 - 2
2 of 11
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March 2011
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DMC4040SSD
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Drain-Source Voltage V
DSS
40 -40
V
Gate-Source Voltage V GSS
±20 ±20
Continuous Drain Current V
GS
= 10V
(Notes 3 & 5)
I
D
7.5 -7.5
A
T
A
= 70°C (Notes 3 & 5) 5.8 -5.8
(Notes 2 & 5) 5.7 -5.7
(Notes 2 & 6) 6.8 -6.8
Pulsed Drain Current V
GS
= 10V (Notes 4 & 5) I
DM
29.0 -29.0
Continuous Source Current (Body diode) (Notes 3 & 5) I
S
3.0 -3.0
Pulsed Source Current (Body diode) (Notes 4 & 5) I
SM
29.0 -29.0
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol N-Channel - Q1 P-Channel - Q2 Unit
Power Dissipation
Linear Derating Factor
(Notes 2 & 5)
P
D
1.25
10
W
mW/
°C
(Notes 2 & 6)
1.8
14.3
(Notes 3 & 5)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 2 & 5)
R θJA
100
°C/W
(Notes 2 & 6) 70
(Notes 3 & 5) 58
Thermal Resistance, Junction to Lead (Notes 5 & 7) R θJL 51
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Notes: 2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note (2), except the device is measured at t
≤ 10 sec.
4. Same as note (2), except the device is pulsed with D = 0.02 and pulse width 300µs.
5. For a dual device with one active die.
6. For a device with two active die running at equal power.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).