Diodes DMC3032LSD - Manual (Page 4)

DMC3032LSD
Document number: DS32153 Rev. 1 - 2
4 of 8
www.diodes.com
May 2010
© Diodes Incorporated
DMC3032LSD
NEW PROD
UC
T
0 5 10 15 20 25 30
Fig. 9 Typical Capacitance
V , DRAIN-SOURCE VOLTAGE (V)
DS
10
100
1,000
C
,
C
A
P
A
C
IT
A
N
C
E (
p
F
)
f = 1MHz
C
iss
C
oss
C
rss
0 5 10 15 20 25 30
Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage
V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
10,000
I,
D
R
AI
N
-S
O
U
R
C
E
L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
Electrical Characteristics P-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-30 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1.0 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I GSS
- - ±100 nA V GS = ±20V, V DS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-1 -1.7 -2.2 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
30 39
mΩ
V GS = -10V, I D = -4.3A
42 53 V
GS
= -4.5V, I
D
= -3.7A
Forward Transfer Admittance |Y
fs
| - 7 - S V
DS
= -5V, I
D
= -4.3A
Diode Forward Voltage (Note 5) V SD
- -0.75 -1.0 V V GS = 0V, I S = -1.7A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
- 1002 - pF
V DS
= -15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 125 - pF
Reverse Transfer Capacitance C
rss
- 118 - pF
Gate Resistance R
g
- 13 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (4.5V) Q
g
- 10.1 - nC
V GS = -4.5V/-10V, V DS = -15V,
I D = -6A
Total Gate Charge (10V) Q
g
- 21.1 - nC
Gate-Source Charge Q
gs
- 2.8 - nC
Gate-Drain Charge Q gd
- 3.2 - nC
Turn-On Delay Time t
D(on)
- 10.1 - ns
V
GS
= -10V, V
DS
= -15V,
R
G
= 6 Ω , I
D
= -1A
Turn-On Rise Time t
r
- 6.5 - ns
Turn-Off Delay Time t D(off)
- 50.1 - ns
Turn-Off Fall Time t
f
- 22.2 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.