Diodes DMC3032LSD - Manual (Page 2)

DMC3032LSD
Document number: DS32153 Rev. 1 - 2
2 of 8
www.diodes.com
May 2010
© Diodes Incorporated
DMC3032LSD
NEW PROD
UC
T
Electrical Characteristics N-CHANNEL – Q1
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
30 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T J = 25°C I DSS
- - 1.0 μA
V DS = 30V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V GS(th)
1 1.45 2.1 V V DS = V GS , I C = 250 μA
Static Drain-Source On-Resistance R DS (ON)
-
23 32
mΩ
V
GS
= 10V, I
C
= 7A
32 46 V
GS
= 4.5V, I
C
= 5.6A
Forward Transfer Admittance |Y
fs
| - 7.6 - S V
DS
= 5V, I
C
= 7A
Diode Forward Voltage (Note 5) V
SD
- 0.7 1.0 V V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C iss
- 404.5 - pF
V DS = 15V, V GS = 0V,
f = 1.0MHz
Output Capacitance C
oss
- 51.8 - pF
Reverse Transfer Capacitance C
rss
- 45.1 - pF
Gate Resistance R
g
- 1.5 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (10V) Q
g
- 9.2 - nC
V
GS
= 10V, V
DS
= 15V,
I
D
= 5.8A
Gate-Source Charge Q
gs
- 1.2 - nC
Gate-Drain Charge Q
gd
- 1.8 - nC
Turn-On Delay Time t
D(on)
- 3.4 - ns
V GS = 10V, V DS = 15V,
R
G
= 3 Ω, R
L
= 2.6 Ω
Turn-On Rise Time t
r
- 6.18 - ns
Turn-Off Delay Time t
D(off)
- 13.92 - ns
Turn-Off Fall Time t
f
- 2.84 - ns
0
4
8
12
16
20
0 1 2 3 4 5
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A)
D
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 8.0V
GS
0
4
8
12
16
20
0 1 2 3 4
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A