Diodes DMC3025LSD - Manual (Page 7)

DMC3025LSD
Document number: DS35717 Rev. 5 - 2
7 of 9
www.diodes.com
August 2012
© Diodes Incorporated
DMC3025LSD
ADVANCED INFORMATION
0
0.02
0.04
0.06
0.08
0.10
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 19. On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
D
S
(on)
Ω
V = -10V
I = A
GS
D
-10
V = 5V
I = A
GS
D
-4.
-5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 20. Gate Threshold Variation vs. Ambient Temperature
A
V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E(
V
)
GS
(T
H
)
0
4
8
12
16
20
0.4 0.6 0.8 1.0 1.2 1.4
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 21. Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
10
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
100
0 5 10 15 20 25 30
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 22. Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0 2 4 6 8 10 12
Q , TOTAL GATE CHARGE (nC)
Figure 23. Gate-Charge Characteristics
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS
R
Limited
DS(on)
DC
P = 10s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
T = 150°C
T = +25°C
J(max)
A
Single Pulse
P = 1s
W
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D