Diodes DMC3025LSD - Manual (Page 2)

DMC3025LSD
Document number: DS35717 Rev. 5 - 2
2 of 9
www.diodes.com
August 2012
© Diodes Incorporated
DMC3025LSD
ADVANCED INFORMATION
Maximum Ratings N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T A = +25
°C
T A = +70
°C
I D
6.5
5.1
A
t<10s
T
A
= +25
°C
T
A
= +70 °C
I
D
8.5
6.8
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= +25 °C
T A = +70
°C
I
D
5.3
4.1
A
t<10s
T
A
= +25
°C
T
A
= +70
°C
I
D
7.0
5.5
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I DM
60 A
Maximum Ratings P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= -10V
Steady
State
T
A
= +25 °C
T
A
= +70 °C
I
D
-4.2
-3.2
A
t<10s
T A = +25
°C
T
A
= +70
°C
I D
-5.5
-4.3
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25
°C
T
A
= +70 °C
I
D
-3.5
-2.3
A
t<10s
T
A
= +25 °C
T A = +70
°C
I D
-4.1
-3.2
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
-2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-30 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P D
1.2
W
T
A
= +70°C 0.77
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R θJA
104
°C/W
t<10s 62
Total Power Dissipation (Note 5)
T A = +25°C
P
D
1.5
W
T
A
= +70°C 0.95
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R θJA
83
°C/W t<10s 49
Thermal Resistance, Junction to Case (Note 5) R θJC 15
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.