Diodes DMG1016V - Manual (Page 6)

DMG1016V
Document number: DS31767 Rev. 3 - 2
6 of 8
www.diodes.com
May 2009
© Diodes Incorporated
DMG1016V
NEW PROD
UC
T
P-CHANNEL – Q
2
(continued)
0
0.4
0.8
1.2
1.6
Fig. 18 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V
, G
A
T
E
THRES
H
O
L
D VO
L
T
AG
E
(V
)
GS
(T
H
)
I = -250µA
D
I = -1mA
D
0
0.2
0.4
0.6
0.8
1.0
0.2 0.4 0.6 0.8 1.0 1.2
Fig. 19 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
1
10
100
0 5 10 15 20
Fig. 20 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
C
,
C
A
P
A
C
IT
AN
C
E (
p
F
)
C
iss
C
rss
C
oss
0 4 8 12 16 20
Fig. 21 Typical Leakage Current
vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
-I
, L
E
AKA
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
10
100
1,000
1
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.00001 0.001 0.01 0.1 1 10 100 1,000
Fig. 22 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.0001
0.001
0.01
0.1
1
r(t),
T
R
A
N
SI
E
N
T
T
H
E
R
MA
L
R
ESI
S
T
A
N
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
J A JA
1 2
θ
R (t) = r(t) * θJA R
R = 260°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5