Diodes DMG1016V - Manual (Page 2)

DMG1016V
Document number: DS31767 Rev. 3 - 2
2 of 8
www.diodes.com
May 2009
© Diodes Incorporated
DMG1016V
NEW PROD
UC
T
Electrical Characteristics N-CHANNEL – Q
1
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage BV DSS
20 ⎯ ⎯ V V GS = 0V, I D = 250
μA
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ 100 nA V DS = 20V, V GS = 0V
Gate-Source Leakage I GSS
⎯ ⎯ ± 1.0 μA
V GS = ±4.5V, V DS = 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage V
GS(th)
0.5 ⎯ 1.0 V V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯ 0.3
0.4
0.5 0.4
0.5
0.7
Ω
V
GS
= 4.5V, I
D
= 600mA
V
GS
= 2.5V, I
D
= 500mA
V GS = 1.8V, I D = 350mA
Forward Transfer Admittance |Y
fs
| ⎯ 1.4 ⎯ S V
DS
=10V, I
D
= 400mA
Diode Forward Voltage (Note 4) V
SD
⎯ 0.7 1.2 V V
GS
= 0V, I
S
= 150mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
⎯ 60.67 ⎯ pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 9.68 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 5.37 ⎯ pF
Total Gate Charge Q
g
⎯ 736.6 ⎯
pC
V
GS
= 4.5V, V
DS
= 10V,
I
D
= 250mA
Gate-Source Charge Q
gs
⎯ 93.6 ⎯
Gate-Drain Charge Q gd
⎯ 116.6 ⎯
Turn-On Delay Time t
d(on)
⎯ 5.1 ⎯
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47
Ω, R
G
= 10
Ω,
I
D
= 200mA
Turn-On Rise Time t
r
⎯ 7.4 ⎯
Turn-Off Delay Time t
d(off)
⎯ 26.7 ⎯
Turn-Off Fall Time t f
⎯ 12.3 ⎯
Electrical Characteristics P-CHANNEL – Q
2 @T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -100 nA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ± 2.0 μA
V
GS
= ±4.5V, V
DS
= 0V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage V
GS(th)
-0.5 ⎯ -1.0 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
0.5
0.7
1.0 0.7
0.9
1.3
Ω
V
GS
= -4.5V, I
D
= -430mA
V
GS
= -2.5V, I
D
= -300mA
V
GS
= -1.8V, I
D
= -150mA
Forward Transfer Admittance |Y
fs
|
⎯ -0.9 ⎯ S V
DS
=10V, I
D
= -250mA
Diode Forward Voltage (Note 4) V
SD
⎯ -0.8 -1.2 V V
GS
= 0V, I
S
= -150mA
DYNAMIC CHARACTERISTICS
Input Capacitance C
iss
⎯ 59.76 ⎯ pF
V DS = -16V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 12.07 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 6.36 ⎯ pF
Total Gate Charge Q
g
⎯ 622.4 ⎯
pC
V GS = -4.5V, V DS = -10V,
I
D
= -250mA
Gate-Source Charge Q
gs
⎯ 100.3 ⎯
Gate-Drain Charge Q
gd
⎯ 132.2 ⎯
Turn-On Delay Time t
d(on)
⎯ 5.1 ⎯
ns
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 47 Ω, R
G
= 10 Ω,
I
D
= -200mA
Turn-On Rise Time t r
⎯ 8.1 ⎯
Turn-Off Delay Time t
d(off)
⎯ 28.4 ⎯
Turn-Off Fall Time t
f
⎯ 20.7 ⎯
Notes: 4. Short duration pulse test used to minimize self-heating effect.