Dmg1016v new prod uc t, N-channel – q, Dmg1016v – Diodes DMG1016V User Manual
Page 3
DMG1016V
Document number: DS31767 Rev. 3 - 2
3 of 8
May 2009
© Diodes Incorporated
DMG1016V
NEW PROD
UC
T
N-CHANNEL – Q
1
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Fig. 1 Typical Output Characteristic
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
V
= 1.5V
GS
V
= 2.0V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 1.2V
GS
V
= 4.5V
GS
V
= 8.0V
GS
0
0.2
0.4
0.6
0.8
1.0
0
0.5
1
1.5
2
Fig. 2 Typical Transfer Characteristic
V
, GATE-SOURCE VOLTAGE (V)
GS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
0.2
0.4
0.6
0.8
1.0
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R
,
DRAIN-
S
OU
RCE ON-
RE
S
IST
A
NC
E (
)
DS
(O
N)
Ω
V
= 4.5V
GS
V
= 2.5V
GS
V
= 1.8V
GS
0
0.1
0.2
0.3
0.4
0.5
0
0.2
0.4
0.6
0.8
1.0
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ES
IS
T
A
N
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 5 On-Resistance Variation with Temperature
-50
-25
0
V
= 2.5V
I = 250mA
GS
D
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRA
IN-
S
OURCE
O
N
-R
ESI
ST
ANCE (
N
O
R
M
A
L
IZED)
DS
O
N
V
= 4.5V
I = 500mA
GS
D
0
0.2
0.4
0.6
0.8
Fig. 6 On-Resistance Variation with Temperature
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAIN
-S
OURCE
O
N
-R
ESI
ST
ANCE (
)
DS
O
N
Ω
V
= 4.5V
I = 500mA
GS
D
V
= 2.5V
I = 250mA
GS
D