Dmc2400uv – Diodes DMC2400UV User Manual
Page 8
DMC2400UV
Document number: DS35537 Rev. 6 - 2
8 of 10
February 2012
© Diodes Incorporated
DMC2400UV
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
20
40
60
80
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
0
5
10
15
20
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 21 Typical Junction Capacitance
f = 1MHz
C
iss
C
oss
C
rss
0.1
10
100
1,000
-I
, L
E
AKA
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
1
-V
, DRAIN-SOURCE VOLTAGE(V)
Fig. 22 Typical Drain-Source Leakage Current vs. Voltage
DS
0
4
8
12
16
20
T = 1
A
25 C
°
T = 8
A
5 C
°
T = 2
A
5 C
°
T = 1
A
50 C
°
0
1
2
3
4
5
6
7
8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Fig. 23 Gate-Charge Characteristics
Q , TOTAL GATE CHARGE (nC)
g
V
,
G
A
T
E
-S
O
URC
E VO
L
T
AG
E
(
V
)
GS
V
= -10V
I = -250mA
DS
D
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 24 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0.000001
0.0001
0.001
0.01
0.1
1
10
100
1,000
Fig. 25 Transient Thermal Response
t , PULSE DURATION TIME (s)
1
0.00001
0.001
0.01
0.1
1
r(t),
T
R
ANSI
E
N
T
T
H
E
R
MA
L
R
ES
IS
T
AN
C
E
T - T = P * R
(t)
Duty Cycle, D = t /t
J
A
JA
1 2
θ
R
(t) = r(t) *
θJA
R
R
= 275°C/W
θ
θ
JA
JA
P(pk)
t
1
t
2
D = 0.7
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
D = 0.9
D = 0.5