Diodes DMC2400UV - Manual (Page 3)

DMC2400UV
Document number: DS35537 Rev. 6 - 2
3 of 10
www.diodes.com
February 2012
© Diodes Incorporated
DMC2400UV
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics - Q1 N-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
20 - - V V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 100 nA V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±1
μA
V GS = ±5V, V DS = 0V
- - ±4.0 V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.5 - 0.9 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R
DS (ON)
- 0.3 0.48
Ω
V
GS
= 5.0V, I
D
= 200mA
- 0.35 0.5 V
GS
= 4.5V, I
D
= 200mA
- 0.45 0.7 V GS = 2.5V, I D = 200mA
- 0.55 0.9 V
GS
= 1.8V, I
D
= 100mA
- 0.65 1.5 V
GS
= 1.5V, I
D
= 50mA
- 2 - V GS = 1.2V, I D = 1mA
Forward Transfer Admittance |Y
fs
| - 1.4 - S V
DS
= 3V, I
D
= 200mA
Diode Forward Voltage V
SD
- 0.7 1.2 V V
GS
= 0V, I
S
= 500mA,
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 37.1 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 6.5 -
Reverse Transfer Capacitance C rss
- 4.8 -
Gate Resistance R
g
- 68 - Ω V
DS
= 0V, V
GS
= 0V,
Total Gate Charge Q
g
- 0.5 -
nC
V
GS
= 4.5V, V
DS
= 10V,
I D = 250mA
Gate-Source Charge Q gs
- 0.07 -
Gate-Drain Charge Q
gd
- 0.1 -
Turn-On Delay Time t
D(on)
- 4.06 -
ns
V
DD
= 10V, V
GS
= 4.5V,
R
L
= 47 Ω, R
G
= 10 Ω,
I
D
= 200mA
Turn-On Rise Time t
r
- 7.28 -
Turn-Off Delay Time t
D(off)
- 13.74 -
Turn-Off Fall Time t
f
- 10.54 -
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
0
0.5
1.0
1.5
2.0
0 1 2 3 4 5
Fig. 1 Typical Output Characteristics
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D V = 1.5V
GS
V = 2.0V
GS
V = 2.5V
GS
V = 4.5V
GS
V = 1.2V
GS
V = 1.8V
GS
0
0.5
1.0
1.5
0 0.5 1 1.5 2 2.5 3
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
Fig. 2 Typical Transfer Characteristics
V , GATE SOURCE VOLTAGE (V)
GS
V = 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A