Electrical characteristics - q2 p-channel – Diodes DMC2400UV User Manual
Page 6
DMC2400UV
Document number: DS35537 Rev. 6 - 2
6 of 10
February 2012
© Diodes Incorporated
DMC2400UV
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics - Q2 P-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-20 - - V
V
GS
= 0V, I
D
= -1mA
Zero Gate Voltage Drain Current T
J
= 25°C
I
DSS
- -
-100
nA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±1.0
μA
V
GS
= ±5V, V
DS
= 0V
- -
±5.0
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5 - -1.0 V
V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance
R
DS (ON)
- 0.67
0.97
Ω
V
GS
= -5V, I
D
= -100mA
0.7
1.0
V
GS
= -4.5V, I
D
= -100mA
- 0.9 1.5
V
GS
= -2.5V, I
D
= -80mA
- 1.2 2.0
V
GS
= -1.8V, I
D
= -40mA
- 1.5 3.0
V
GS
= -1.5V, I
D
= -30mA
- 5 -
V
GS
= -1.2V, I
D
= -1mA
Forward Transfer Admittance
|Y
fs
|
- 0.7 - S
V
DS
= -3V, I
D
= -100mA
Diode Forward Voltage
V
SD
-
-0.75
-1.2
V
V
GS
= 0V, I
S
= -330mA,
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 46.1 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 7.2 -
Reverse Transfer Capacitance
C
rss
- 4.9 -
Gate Resistance
R
g
- 14.3 -
Ω
V
DS
= 0V, V
GS
= 0V,
Total Gate Charge V
GS
= -4.5V
Q
g
- 0.5 -
nC
V
DS
= -10V, I
D
= -250mA
Total Gate Charge V
GS
= -10V
Q
g
- 0.85 -
Gate-Source Charge
Q
gs
- 0.09 -
Gate-Drain Charge
Q
gd
- 0.09 -
Turn-On Delay Time
t
D(on)
-
8.5
-
ns
V
DD
= -3V, V
GS
= -2.5V,
R
L
= 300
Ω, R
G
= 25
Ω,
I
D
= -100mA
Turn-On Rise Time
t
r
-
4.3
-
Turn-Off Delay Time
t
D(off)
-
20.2
-
Turn-Off Fall Time
t
f
-
19.2
-
Notes:
4. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
0
1
2
3
4
5
-V
, DRAIN -SOURCE VOLTAGE (V)
Fig. 13 Typical Output Characteristics
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
0.2
0.4
0.6
0.8
1.0
0
1
2
3
4
-V
, GATE SOURCE VOLTAGE(V)
Fig. 14 Typical Transfer Characteristics
GS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0
0.2
0.4
0.6
0.8
1.0
T = 125 C
A
°