Diodes DMP6185SE - Manual (Page 4)

DMP6185SE
Document Number DS36465 Rev. 4 - 2
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 7 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
D
S
(on)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
V = -4.5V
I = A
GS
D
-10
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
0
0.2
0.4
0.6
0.8
1
1.2
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 125 C
A
°
T = 150 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
10
100
1000
10000
0 5 10 15 20 25 30 35 40
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V
,
G
AT
E
-S
O
U
R
C
E V
O
LTA
G
E (
V
)
GS
0
1
2
3
4
5
6
7
8
9
10
0 3 6 9 12 15
V = -30V
I = -12A
DS
D