Diodes DMP6185SE - Manual (Page 2)

DMP6185SE
Document Number DS36465 Rev. 4 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6185SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
-60 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current (Note 6) V
GS
= -10V
T
A
= +25°C
I
D
-3
A
T
A
= +70°C -2.4
Maximum Body Diode Continuous Current I
S
-2 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-15 A
Single Pulsed Avalanche Current (Note 7) I
AS
-16 A
Single Pulsed Avalanche Energy (Note 7) E
AS
13 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C 0.8
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
104
°C/W
t<10s 51
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.2
W
T
A
= +70°C 1.4
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
60
°C/W t<10s 30
Thermal Resistance, Junction to Case (Note 6) R
θJC
7.6
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-60 − − V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
− − -1 µA V
DS
= -48V, V
GS
= 0V
Gate-Source Leakage I
GSS
− − ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1 − -3 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
−
110 150
mΩ
V
GS
= -10V, I
D
= -2.2A
130 185 V
GS
= -4.5V, I
D
= -1.8A
Diode Forward Voltage V
SD
− -0.75 -0.95 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
− 708 − pF
V
DS
= -30V, V
GS
= 0V,
f = 1MHz
Output Capacitance C
oss
− 39 − pF
Reverse Transfer Capacitance C
rss
− 32 − pF
Gate Resistance R
g
− 17 28 Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
− 6.2 − nC
V
DS
= -30V, I
D
= -12A
Total Gate Charge (V
GS
= -10V) Q
g
− 14 − nC
Gate-Source Charge Q
gs
− 2.8 − nC
Gate-Drain Charge Q
gd
− 3.1 − nC
Turn-On Delay Time t
D(on)
− 5.2 − ns
V
DS
= -30V, R
L
= 2.5Ω
V
GS
= -10V, R
G
= 3Ω
Turn-On Rise Time t
r
− 23 − ns
Turn-Off Delay Time t
D(off)
− 33 − ns
Turn-Off Fall Time t
f
− 39 − ns
Body Diode Reverse Recovery Time t
rr
− 22 − ns
I
F
= -12A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
− 17 − nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 0.1mH, starting T
A
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.