Diodes DMP3012LPS - Manual (Page 2)

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DMP3012LPS
Document number: DS35247 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMP3012LPS
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= -10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
13.2
10.5
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
11.4
9.1
A
Pulsed Drain Current (Notes 6) I
DM
-100 A
Avalanche Current (Notes 7) L = 1mH I
AR
-24 A
Avalanche Energy (Notes 7) L = 1mH E
AR
292 mJ
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5) P
D
1.29 W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 5) R
θJA
97 °C/W
Power Dissipation (Note 6) P
D
2.36 W
Thermal Resistance, Junction to Ambient @ T
A
= +25°C (Note 6) R
θJA
53 °C/W
Thermal Resistance, Junction to Case @ T
C
= +25°C (Notes 6 ) R
θJC
4.0 °C/W
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-30 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1.0 μA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1.1 -1.6 -2.1 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
— 7.5 9.0
mΩ
V
GS
= -10V, I
D
= -10A
— 8.5 12.0 V
GS
= -4.5V, I
D
= -10A
Forward Transfer Admittance |Y
fs
| — 30 — S V
DS
= -15V, I
D
= -10A
Diode Forward Voltage V
SD
— -0.65 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 6807 — pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 988 — pF
Reverse Transfer Capacitance C
rss
— 647 — pF
Gate Resistance R
g
— 6.2 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -10V) Q
g
— 139 — nC
V
DS
= -15V, I
D
= -10A
Total Gate Charge (V
GS
= -4.5V) Q
g
— 66 — nC
Gate-Source Charge Q
gs
— 19 — nC
Gate-Drain Charge Q
gd
— 21 — nC
Turn-On Delay Time t
D(on)
— 8.9 — ns
V
DS
= -15V, V
GEN
= -10V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time t
r
— 10.5 — ns
Turn-Off Delay Time t
D(off)
— 254 — ns
Turn-Off Fall Time t
f
— 95 — ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.